Robust structure symmetry and electronic band structure of the chiral topological semimetal CoSi against high pressure
2022-06
发表期刊MATERIALS TODAY COMMUNICATIONS
ISSN/
EISSN2352-4928
卷号31
发表状态已发表
DOI10.1016/j.mtcomm.2022.103667
摘要

The chiral crystal symmetry in the transition metal monosilicide CoSi plays a requisite role in protecting the multifold chiral fermion and its robustness to external pressures is very crucial for the applications of this important material. By performing high-pressure X-ray diffraction and electronic transport measurements, we reveal that the chiral structure of CoSi is robust against external pressure up to ~ 39 GPa. The ab initio calculations unveil that the external pressure negligibly influences the electric band structure in which the threefold degenerate spin-1 chiral fermion at the Γ point and the fourfold degenerate charge-2 Dirac node at the R point in the Brillouin zone could be well preserved. Through studying the high pressure effects on the unconventional topological semimetal CoSi, our results have unveiled robust multifold chiral fermions under the high pressure. © 2022 Elsevier Ltd

关键词Band structure Calculations Cobalt compounds High pressure effects Silicon compounds Topology Transition metals Ab initio calculations Brillouin zones Chiral crystals Chiral structures Electronic band structure Electronic transport measurements External pressures High pressure Structure symmetry X- ray diffractions
收录类别SCIE ; EI
语种英语
出版者Elsevier Ltd
EI入藏号20222212173909
EI主题词Crystal symmetry
EI分类号531 Metallurgy and Metallography ; 921 Mathematics ; 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 933 Solid State Physics ; 933.1.1 Crystal Lattice
原始文献类型Journal article (JA)
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/187899
专题物质科学与技术学院_PI研究组_郭艳峰组
通讯作者Leiming, Chen
作者单位
1.School of Materials Science and Engineering, Zhengzhou University of Aeronautics, Zhengzhou; 450046, China;
2.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China;
3.Henan Key Laboratory of Aeronautical Material and Application Technology, Zhengzhou University of Aeronautics, Zhengzhou; 450046, China;
4.Institute of Science and Technology Information of Henan Province, Zhengzhou; 450003, China;
5.Yongcheng City Vocational Education Center, Yongcheng; 476600, China;
6.Kaixue Cold Chain Logistics co., ltd, Zhengzhou; 451450, China
推荐引用方式
GB/T 7714
Leiming, Chen,Hangqi, Liu,Chunrui, Zheng,et al. Robust structure symmetry and electronic band structure of the chiral topological semimetal CoSi against high pressure[J]. MATERIALS TODAY COMMUNICATIONS,2022,31.
APA Leiming, Chen.,Hangqi, Liu.,Chunrui, Zheng.,Yanhong, Chen.,Zhihui, Zhao.,...&Yanfeng, Guo.(2022).Robust structure symmetry and electronic band structure of the chiral topological semimetal CoSi against high pressure.MATERIALS TODAY COMMUNICATIONS,31.
MLA Leiming, Chen,et al."Robust structure symmetry and electronic band structure of the chiral topological semimetal CoSi against high pressure".MATERIALS TODAY COMMUNICATIONS 31(2022).
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