Effect of the Gate Length on Terahertz Heterodyne detection Based on GaN HEMT

doi:10.1109/IRMMW-THz50926.2021.9567304

	Effect of the Gate Length on Terahertz Heterodyne detection Based on GaN HEMT
	Feng, W.1,2; Sun, J. D.1,2; Ding, Q. F.2,3 ; Qin, H.1,2
	2021
会议录名称	2021 46TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ)
ISSN	2162-2027
发表状态	已发表
DOI	10.1109/IRMMW-THz50926.2021.9567304
摘要	In this work, room-temperature terahertz heterodyne mixers based on GaN high-electron-mobility transistors are studied. For comparison, asymmetric antennas with gate lengths of L=170 nm and L=600 nm are specially designed to couple with terahertz waves ranging from 320-345 GHz, respectively. It is found that the performance of mixer for L=170 nm, such as the optical sensitivity and the conversion loss, is obviously superior to the one for L=600 nm.
会议名称	46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
会议地点	null,null,ELECTR NETWORK
会议日期	AUG 30-SEP 03, 2021
URL	查看原文
收录类别	EI ; CPCI ; CPCI-S
语种	英语
WOS研究方向	Engineering ; Optics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Optics ; Physics, Applied
WOS记录号	WOS:000782468300434
出版者	IEEE
来源库	IEEE
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/183430
专题	物质科学与技术学院_博士生
通讯作者	Feng, W.
作者单位	1.Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
推荐引用方式 GB/T 7714	Feng, W.,Sun, J. D.,Ding, Q. F.,et al. Effect of the Gate Length on Terahertz Heterodyne detection Based on GaN HEMT[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2021.