Anisotropic Infrared Response and Orientation-Dependent Strain-Tuning of the Electronic Structure in Nb2SiTe4

doi:10.1021/acsnano.2c01254

	Anisotropic Infrared Response and Orientation-Dependent Strain-Tuning of the Electronic Structure in Nb2SiTe4
	Wang, Fanjie 1; Xu, Yonggang 2,3; Mu, Lei 2; Zhang, Jiasheng 2; Xia, Wei; Xue, Jiamin4 ; Guo, Yanfeng4 ; Yang, Ji-Hui 2,3; Yan, Hugen 2
	2022
发表期刊	ACS NANO
ISSN	1936-0851
EISSN	1936-086X
卷号	16 期号:5
发表状态	已发表
DOI	10.1021/acsnano.2c01254
摘要	Two-dimensional materials with tunable in-plane anisotropic infrared response promise versatile applications in polarized photodetectors and field-effect transistors. Black phosphorus is a prominent example. However, it suffers from poor ambient stability. Here, we report the strain-tunable anisotropic infrared response of a layered material Nb2SiTe4, whose lattice structure is similar to the 2H-phase transition metal dichalcogenides (TMDCs) with three different kinds of building units. Strikingly, some of the strain-tunable optical transitions are crystallographic axis-dependent, even showing an opposite shift when uniaxial strain is applied along two in-plane principal axes. Moreover, G0W0-BSE calculations show good agreement with the anisotropic extinction spectra. The optical selection rules are obtained via group theory analysis, and the strain induced unusual shift trends are well explained by the orbital coupling analysis. Our comprehensive study suggests that Nb2SiTe4 is a good candidate for tunable polarization-sensitive optoelectronic devices. ©
关键词	Anisotropy Electronic structure Field effect transistors Niobium compounds Optoelectronic devices Silicon compounds Transition metals Anisotropic infrared material DFT Extinction spectroscopy G0W0-BSE Infrared material Infrared response Orientation dependent Strain engineering Strain tuning Tunables
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收录类别	EI ; SCIE
语种	英语
资助项目	National Natural Science Foundation of China[11991061,11974078,11874009,11734007] ; National Key Research and Development Program of China["2021YFA1400100","2017YFA0303504"] ; Natural Science Foundation of Shanghai[20JC1414601] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Shanghai Sailing Program[19YF1403100] ; State Key Laboratory of Surface Physics and Department of Physics, Fudan University[KF2020_09]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000812148900085
出版者	American Chemical Society
EI入藏号	20221812064151
EI主题词	Group theory
EI分类号	531 Metallurgy and Metallography ; 714.2 Semiconductor Devices and Integrated Circuits ; 741.3 Optical Devices and Systems ; 921.1 Algebra ; 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 931.2 Physical Properties of Gases, Liquids and Solids
原始文献类型	Article in Press
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/180939
专题	物质科学与技术学院_博士生物质科学与技术学院_PI研究组_薛加民组物质科学与技术学院_PI研究组_郭艳峰组
通讯作者	Guo, Yanfeng; Yang, Ji-Hui; Yan, Hugen
作者单位	1.Fudan Univ, State Key Lab Surface Phys, Key Lab Micro & Nano Photon Struct, Minist Educ, Shanghai 200433, Peoples R China 2.Fudan Univ, Key Lab Computat Phys Sci MOE, State Key Lab Surface Phys, Dept Phys, Shanghai 200433, Peoples R China 3.China Shanghai Qizhi Inst, Shanghai 200232, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Wang, Fanjie,Xu, Yonggang,Mu, Lei,et al. Anisotropic Infrared Response and Orientation-Dependent Strain-Tuning of the Electronic Structure in Nb2SiTe4[J]. ACS NANO,2022,16(5).
APA	Wang, Fanjie.,Xu, Yonggang.,Mu, Lei.,Zhang, Jiasheng.,Xia, Wei.,...&Yan, Hugen.(2022).Anisotropic Infrared Response and Orientation-Dependent Strain-Tuning of the Electronic Structure in Nb2SiTe4.ACS NANO,16(5).
MLA	Wang, Fanjie,et al."Anisotropic Infrared Response and Orientation-Dependent Strain-Tuning of the Electronic Structure in Nb2SiTe4".ACS NANO 16.5(2022).