Al0.7Sc0.3N butterfly-shaped laterally vibrating resonator with a figure-of-merit (kt2·qm) over 146

doi:10.1063/5.0090226

	Al0.7Sc0.3N butterfly-shaped laterally vibrating resonator with a figure-of-merit (kt2·qm) over 146
	Luo, Zhifang1,2,3 ; Shao, Shuai1,2,3 ; Liu, Kangfu1,2,3 ; Lu, Yuan 4; Mazzalai, Andrea 4; Tosi, Carlo 4; Wu, Tao1,2,3,5
	2022-04-25
发表期刊	APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year])
ISSN	0003-6951
卷号	120 期号:17
发表状态	已发表
DOI	10.1063/5.0090226
摘要	This work presents the laterally vibrating Lamb wave resonators (LVRs) based on a 30% aluminum scandium nitride (Al0.7Sc0.3N) thin film with three interdigited transducer pairs operating in the S0 mode. In order to reduce the anchor loss, perfect matched layer-based finite element analysis simulations are utilized to design and optimize the device. Thanks to the high quality AlScN using magnetron sputtering with a single alloy target, vertical etching profile, and designed device structure, 1-μm-thick Al0.7Sc0.3N-based LVRs with high performance are fabricated. The resonator equivalent electric parameters are extracted utilizing the modified Butterworth-Van Dyke model. The best Al0.7Sc0.3N LVR achieves an electromechanical coupling coefficient (kt2) of 9.7% and a loaded quality factor (Qr) of 1141.5 operating at approximately 305 MHz. The same resonator shows a motional quality factor (Qm) of 1507.2, resulting in a high figure-of-merit (FoM = kt2 · Qm) of 146.2. A 1.8 MHz tuning range is measured for an Al0.7Sc0.3N LVR by applying DC voltage in the range of -40 to 40 V due to the ferroelectric property of high Sc doping in Al0.7Sc0.3N. With the high FoM, Qr, Qm, and low motional resistance (Rm), the Al0.7Sc0.3N-based LVRs show strong potential in applications of radio frequency communications and piezoelectric transducers. © 2022 Author(s).
关键词	Aluminum nitride Electromechanical coupling Etching III-V semiconductors Scandium Scandium compounds Semiconductor doping Surface waves Transducers Alloy target Anchor loss Etching profile Finite element analyse High quality Lamb wave resonators Magnetron-sputtering Perfect matched layers Thin-films Vertical etching
收录类别	EI ; SCIE
语种	英语
出版者	American Institute of Physics Inc.
EI入藏号	20221912094288
EI主题词	Resonators
EI分类号	549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 712.1 Semiconducting Materials ; 802.2 Chemical Reactions ; 804.1 Organic Compounds ; 804.2 Inorganic Compounds
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/180927
专题	信息科学与技术学院_博士生信息科学与技术学院_PI研究组_吴涛组
通讯作者	Luo, Zhifang; Wu, Tao
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai; 200050, China; 3.University of Chinese Academy of Sciences, Beijing; 100049, China; 4.EVATEC AG, Trübbach, 9477, Switzerland; 5.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai; 201210, China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Luo, Zhifang,Shao, Shuai,Liu, Kangfu,et al. Al0.7Sc0.3N butterfly-shaped laterally vibrating resonator with a figure-of-merit (kt2·qm) over 146[J]. APPLIED PHYSICS LETTERS,2022,120(17).
APA	Luo, Zhifang.,Shao, Shuai.,Liu, Kangfu.,Lu, Yuan.,Mazzalai, Andrea.,...&Wu, Tao.(2022).Al0.7Sc0.3N butterfly-shaped laterally vibrating resonator with a figure-of-merit (kt2·qm) over 146.APPLIED PHYSICS LETTERS,120(17).
MLA	Luo, Zhifang,et al."Al0.7Sc0.3N butterfly-shaped laterally vibrating resonator with a figure-of-merit (kt2·qm) over 146".APPLIED PHYSICS LETTERS 120.17(2022).