Observation of non-trivial topological electronic structure of orthorhombic SnSe

doi:10.1103/PhysRevMaterials.6.054201

	Observation of non-trivial topological electronic structure of orthorhombic SnSe
	Zheng, H. J.1,2 ; Shi, W. J.3,4 ; Wang, C. W.1,2; Lv, Y. Y.5,6; Xia, W.1,7 ; Li, B. H.1 ; Wu, F.1 ; He, S. M.8; Huang, K.1,2 ; Cui, S. T.9; Chen, C.8,10; Yang, H. F.1 ; Liang, A. J.1,7 ; Wang, M. X.1,7 ; Sun, Z.9; Yao, S. H.5,6; Chen, Y. B.5,6; Guo, Y. F.1,7 ; Mi, Q. X.1 ; Yang, L. X.11; Bahramy, M. S.12; Liu, Z. K.1,7 ; Chen, Y. L.1,7,8,11
	2022-05
发表期刊	PHYSICAL REVIEW MATERIALS (IF:3.1[JCR-2023],3.4[5-Year])
ISSN	2475-9953
卷号	6 期号:5
发表状态	已发表
DOI	10.1103/PhysRevMaterials.6.054201
摘要	Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interest due to its superior thermoelectric performance. However, its topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemission spectroscopy and ab initio calculations, we systematically investigate the topological electronic structure of orthorhombic SnSe. By identifying the continuous gap in the valence bands due to the band inversion and the topological surface states on its (001) surface, we establish SnSe as a strong topological insulator. Furthermore, we study the evolution of the topological electronic structure and propose the topological phase diagram in SnSe1-xTex. Our work reveals the topological nontrivial nature of SnSe and provides understandings of its intriguing transport properties.
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收录类别	SCI ; EI ; SCIE
语种	英语
资助项目	National Key R&D Program of China[2017YFA0305400]
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:000799575500001
出版者	AMER PHYSICAL SOC
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/178427
专题	物质科学与技术学院_博士生物质科学与技术学院_PI研究组_米启兮组物质科学与技术学院_PI研究组_柳仲楷组物质科学与技术学院_PI研究组_郭艳峰组物质科学与技术学院_特聘教授组_陈宇林物质科学与技术学院_硕士生物质科学与技术学院_公共科研平台_拓扑物理实验室大科学中心
通讯作者	Liu, Z. K.
作者单位	1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Ctr Transformat Sci, Shanghai 201210, Peoples R China 4.ShanghaiTech Univ, Shanghai High Repetit Rate XFEL & Extreme Light F, Shanghai 201210, Peoples R China 5.Nanjing Univ, Natl Lab Solid State Microstruct, Dept Phys, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China 6.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 7.ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 8.Univ Oxford, Dept Phys, Oxford OX1 3PU, England 9.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China 10.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA 11.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China 12.Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院; 上海科技大学
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zheng, H. J.,Shi, W. J.,Wang, C. W.,et al. Observation of non-trivial topological electronic structure of orthorhombic SnSe[J]. PHYSICAL REVIEW MATERIALS,2022,6(5).
APA	Zheng, H. J..,Shi, W. J..,Wang, C. W..,Lv, Y. Y..,Xia, W..,...&Chen, Y. L..(2022).Observation of non-trivial topological electronic structure of orthorhombic SnSe.PHYSICAL REVIEW MATERIALS,6(5).
MLA	Zheng, H. J.,et al."Observation of non-trivial topological electronic structure of orthorhombic SnSe".PHYSICAL REVIEW MATERIALS 6.5(2022).