Simulation and experience of realspace transfer effect in GaAs/AlGaAs double quantum well

doi:10.11972/j.issn.1001-9014.2016.04.005

	Simulation and experience of realspace transfer effect in GaAs/AlGaAs double quantum well
	Yu Cheng-Zhang1,2 ; Jin Chuan 1; Bai Zhi-Zhong 1; Chen Jian-Xin1
	2016-08
发表期刊	红外与毫米波学报 (IF:0.6[JCR-2023],0.5[5-Year])
ISSN	1001-9014
卷号	35 期号:4 页码:407-411
发表状态	已发表
DOI	10.11972/j.issn.1001-9014.2016.04.005
摘要	The band structure of a GaAs/AlGaAs double quantum well was calculated via shooting method and finite element method. The energy needed for a ground-excited state transition is 43.3 meV, indicating that a 1.2 to 1.8 kV/cm electric field can cause a horizontal transfer of carriers. The designed double quantum well structure was grown by MBE. Good metal-semiconductor contact was obtained via optimizing annealing conditions. The negative resistance effect was obtained in a 1.5 kV/cm parallel electric field, which is differs from the electric field for GaAs Gunn effect. It was concluded that the mechanism for negative resistance effect is electrons transfer from high mobility layer to low mobility layer, namely real space transfer(RST).
关键词	GaAs/AlGaAs negative differential resistance effect real space transfer
收录类别	SCI ; 北大核心 ; EI
语种	中文
资助项目	National Natural Science Foundation of China[61176082] ; National Natural Science Foundation of China[61290302] ; National Natural Science Foundation of China[61534006]
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000386195600005
出版者	SCIENCE PRESS
EI入藏号	20163702784835
EI主题词	Electric fields ; Excited states ; Finite element method ; Gallium arsenide ; Gunn effect ; Negative resistance ; Semiconducting gallium
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Single Element Semiconducting Materials:712.1.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Products Generally:804 ; Numerical Methods:921.6 ; Atomic and Molecular Physics:931.3
WOS关键词	REAL-SPACE TRANSFER ; ELECTRONS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1761
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_陈建新组物质科学与技术学院_博士生
通讯作者	Chen Jian-Xin
作者单位	1.Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Yu Cheng-Zhang,Jin Chuan,Bai Zhi-Zhong,et al. Simulation and experience of realspace transfer effect in GaAs/AlGaAs double quantum well[J]. 红外与毫米波学报,2016,35(4):407-411.
APA	Yu Cheng-Zhang,Jin Chuan,Bai Zhi-Zhong,&Chen Jian-Xin.(2016).Simulation and experience of realspace transfer effect in GaAs/AlGaAs double quantum well.红外与毫米波学报,35(4),407-411.
MLA	Yu Cheng-Zhang,et al."Simulation and experience of realspace transfer effect in GaAs/AlGaAs double quantum well".红外与毫米波学报 35.4(2016):407-411.