| |||||||
ShanghaiTech University Knowledge Management System
KAg3Ga8S14: An Mid- and Far-infrared Nonlinear Optical Material Exhibiting High Laser-induced Damage Threshold | |
2022-03-15 | |
发表期刊 | 化学学报 (IF:1.7[JCR-2023],1.5[5-Year]) |
ISSN | 0567-7351 |
卷号 | 80期号:3 |
发表状态 | 已发表 |
DOI | 10.6023/A21120585 |
摘要 | Nonlinear optical (NLO) crystals can produce tunable lasers due to their second-harmonic generation, sum-frequency generation, difference-frequency generation and optical parametric oscillation. The famous oxide-based NLO materials such as KH2PO4 (KDP), beta-BaB2O4 (BBO) and LiB3O5 (LBO) are widely used in ultraviolet-visible (UV-Vis) region. Nevertheless, they are not suitable for the mid- and far-infrared region because of the strong absorption there. Currently, commercially available IR NLO materials are rare, such as chalcogenides AgGaS2 (AGS), AgGaSe2 and phosphorus ZnGeP2, which have the advantages of large NLO coefficient and wide transmission range, but they have drawbacks, like low laser-induced damage threshold (LIDT). Discovering NLO crystals that exhibit simultaneously large NLO and high LIDT is a huge challenge. Here, the introducing electropositive alkali metal ionic K+ in chalcopyrite AGS successfully affords a new sulfide KAg3Ga8S14 by high temperature solid state reaction. Its crystal structure adopts a three-dimensional honeycomb-like open framework, in which all tetrahedral AgS4 and GaS4 units are arranged in a highly oriented manner, thereby producing about a medium phase-matching second harmonic generation (SHG) response of 0.4 times that of the benchmark AGS at the incident laser of 1910 nm. Remarkably, the compound possesses a wide band gap (2.95 eV), thus avoiding two-photon absorption of the incident 1064 nm laser, and exhibits a high LIDT of 4.6 times that of the AGS at the laser of 1064 nm. Moreover, KAg3Ga8S14 has a wide transmission range (0.25-25.0 mu m) that covers the two important atmospheric windows of 3-5 and 8-12 mu m. Furthermore, according to theoretical calculations, the conductive band is mostly composed of Ga-4s and S-3p states, mixing with small amounts of Ga-4p state, whereas the valence band near the Fermi level originates predominately from Ag-4p and S-3p states, mixing with small amounts of Ga-4p state, indicating that tetrahedral GaS4 and AgS4 units govern the optical and NLO properties of chalcopyrite KAg3Ga8S14. |
关键词 | chalcogenide nonlinear optical second harmonic generation laser damage threshold crystal structure |
URL | 查看原文 |
收录类别 | SCI ; SCIE ; 北大核心 |
语种 | 中文 |
资助项目 | National Natural Science Foundation of China[22075283,92161125] ; Youth Innovation Promotion Association of CAS[2021300] |
WOS研究方向 | Chemistry |
WOS类目 | Chemistry, Multidisciplinary |
WOS记录号 | WOS:000779370500005 |
出版者 | SCIENCE PRESS |
引用统计 | 正在获取...
|
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/176024 |
专题 | 物质科学与技术学院_硕士生 |
通讯作者 | Liu Binwen; Guo Guocong |
作者单位 | 1.Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Zhao Jinxu,Zhang Mingshu,Chen Wenfa,et al. KAg3Ga8S14: An Mid- and Far-infrared Nonlinear Optical Material Exhibiting High Laser-induced Damage Threshold[J]. 化学学报,2022,80(3). |
APA | Zhao Jinxu,Zhang Mingshu,Chen Wenfa,Jiang Xiaoming,Liu Binwen,&Guo Guocong.(2022).KAg3Ga8S14: An Mid- and Far-infrared Nonlinear Optical Material Exhibiting High Laser-induced Damage Threshold.化学学报,80(3). |
MLA | Zhao Jinxu,et al."KAg3Ga8S14: An Mid- and Far-infrared Nonlinear Optical Material Exhibiting High Laser-induced Damage Threshold".化学学报 80.3(2022). |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 |
修改评论
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。