Metal-insulator transition and the anomalous Hall effect in the layered magnetic materials VS2 and VSe2

doi:10.1088/1367-2630/18/11/113038

	Metal-insulator transition and the anomalous Hall effect in the layered magnetic materials VS2 and VSe2
	Fuh, Huei-Ru 1,2; Yan, Binghai2,3,4 ; Wu, Shu-Chun 2; Felser, Claudia 2; Chang, Ching-Ray 1
	2016-11-22
发表期刊	NEW JOURNAL OF PHYSICS (IF:2.8[JCR-2023],3.0[5-Year])
ISSN	1367-2630
卷号	18 期号:11
发表状态	已发表
DOI	10.1088/1367-2630/18/11/113038
摘要	We investigated the electronic structure of the layered transition-metal dichalcogenides VS2 and VSe2 by first-principles calculations. Both compounds exhibit metal-insulator transitions when crossing over from the bulk to the two-dimensional monolayer. In the monolayer limit, the Coulomb interaction is enhanced due to the dimension reduction, leading to the insulating state. Moreover, these monolayers are found to be ferromagnetic, supplying excellent candidates for ferromagnetic insulators. When increasing the thickness, the few-layer structure turns metallic and presents large anomalous Hall conductivity (similar to 100 S/cm), which oscillates with respect to the thickness due to the size effect. Our findings presents profound materials, such as ferromagnetic insulators and anomalous Hall ferromagnets, for the spintronic application.
关键词	metal-insulator transition anomalous Hall effect layered magnetic materials first-principles calculations ferromagnetic insulators
收录类别	SCI ; EI
语种	英语
资助项目	ERC[291472]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000389325200002
出版者	IOP PUBLISHING LTD
EI入藏号	20165303203431
EI主题词	Calculations ; Electronic structure ; Ferromagnetic materials ; Ferromagnetism ; Hall effect ; Magnetic materials ; Metal insulator boundaries ; Metals ; Monolayers ; Semiconductor insulator boundaries ; Transition metals
EI分类号	Metallurgy and Metallography:531 ; Electricity: Basic Concepts and Phenomena:701.1 ; Magnetic Materials:708.4 ; Semiconductor Devices and Integrated Circuits:714.2 ; Mathematics:921
WOS关键词	SE
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1631
专题	物质科学与技术学院_PI研究组_颜丙海组
通讯作者	Chang, Ching-Ray
作者单位	1.Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan 2.Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 4.CAS Shanghai Sci Res Ctr, Shanghai 201203, Peoples R China
推荐引用方式 GB/T 7714	Fuh, Huei-Ru,Yan, Binghai,Wu, Shu-Chun,et al. Metal-insulator transition and the anomalous Hall effect in the layered magnetic materials VS2 and VSe2[J]. NEW JOURNAL OF PHYSICS,2016,18(11).
APA	Fuh, Huei-Ru,Yan, Binghai,Wu, Shu-Chun,Felser, Claudia,&Chang, Ching-Ray.(2016).Metal-insulator transition and the anomalous Hall effect in the layered magnetic materials VS2 and VSe2.NEW JOURNAL OF PHYSICS,18(11).
MLA	Fuh, Huei-Ru,et al."Metal-insulator transition and the anomalous Hall effect in the layered magnetic materials VS2 and VSe2".NEW JOURNAL OF PHYSICS 18.11(2016).