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ShanghaiTech University Knowledge Management System
Metal-insulator transition and the anomalous Hall effect in the layered magnetic materials VS2 and VSe2 | |
2016-11-22 | |
发表期刊 | NEW JOURNAL OF PHYSICS (IF:2.8[JCR-2023],3.0[5-Year]) |
ISSN | 1367-2630 |
卷号 | 18期号:11 |
发表状态 | 已发表 |
DOI | 10.1088/1367-2630/18/11/113038 |
摘要 | We investigated the electronic structure of the layered transition-metal dichalcogenides VS2 and VSe2 by first-principles calculations. Both compounds exhibit metal-insulator transitions when crossing over from the bulk to the two-dimensional monolayer. In the monolayer limit, the Coulomb interaction is enhanced due to the dimension reduction, leading to the insulating state. Moreover, these monolayers are found to be ferromagnetic, supplying excellent candidates for ferromagnetic insulators. When increasing the thickness, the few-layer structure turns metallic and presents large anomalous Hall conductivity (similar to 100 S/cm), which oscillates with respect to the thickness due to the size effect. Our findings presents profound materials, such as ferromagnetic insulators and anomalous Hall ferromagnets, for the spintronic application. |
关键词 | metal-insulator transition anomalous Hall effect layered magnetic materials first-principles calculations ferromagnetic insulators |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | ERC[291472] |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
WOS记录号 | WOS:000389325200002 |
出版者 | IOP PUBLISHING LTD |
EI入藏号 | 20165303203431 |
EI主题词 | Calculations ; Electronic structure ; Ferromagnetic materials ; Ferromagnetism ; Hall effect ; Magnetic materials ; Metal insulator boundaries ; Metals ; Monolayers ; Semiconductor insulator boundaries ; Transition metals |
EI分类号 | Metallurgy and Metallography:531 ; Electricity: Basic Concepts and Phenomena:701.1 ; Magnetic Materials:708.4 ; Semiconductor Devices and Integrated Circuits:714.2 ; Mathematics:921 |
WOS关键词 | SE |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1631 |
专题 | 物质科学与技术学院_PI研究组_颜丙海组 |
通讯作者 | Chang, Ching-Ray |
作者单位 | 1.Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan 2.Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 4.CAS Shanghai Sci Res Ctr, Shanghai 201203, Peoples R China |
推荐引用方式 GB/T 7714 | Fuh, Huei-Ru,Yan, Binghai,Wu, Shu-Chun,et al. Metal-insulator transition and the anomalous Hall effect in the layered magnetic materials VS2 and VSe2[J]. NEW JOURNAL OF PHYSICS,2016,18(11). |
APA | Fuh, Huei-Ru,Yan, Binghai,Wu, Shu-Chun,Felser, Claudia,&Chang, Ching-Ray.(2016).Metal-insulator transition and the anomalous Hall effect in the layered magnetic materials VS2 and VSe2.NEW JOURNAL OF PHYSICS,18(11). |
MLA | Fuh, Huei-Ru,et al."Metal-insulator transition and the anomalous Hall effect in the layered magnetic materials VS2 and VSe2".NEW JOURNAL OF PHYSICS 18.11(2016). |
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