Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

doi:10.3390/nano12030478

	Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
	Wu, Peng1,2,3,4,5 ; Liu, Jianping 1,5; Jiang, Lingrong 1,5; Hu, Lei 1,5; Ren, Xiaoyu 1,5; Tian, Aiqin 1,5; Zhou, Wei 1,5; Ikeda, Masao 1,5; Yang, Hui1,2,5
	2022-02
发表期刊	NANOMATERIALS
EISSN	2079-4991
卷号	12 期号:3
发表状态	已发表
DOI	10.3390/nano12030478
摘要	Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on a step motion model successfully explain the growth behaviors on stripes. These findings can be applied to control the surface kinetics of devices such as laser diodes grown on patterned substrate.
关键词	step motions spiral growth island growth patterned substrate
URL	查看原文
收录类别	SCI ; SCIE
语种	英语
资助项目	Key Research and Development Program of Guangdong Province[2020B090922001] ; National Key Research and Development Program of China[2017YFE0131500] ; National Natural Science Foundation of China[61834008] ; Key Research and Development Program of Jiangsu Province["BE2020004","BE2021008-1"] ; Guangdong Basic and Applied Basic Research Foundation[2019B1515120091]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000756545000001
出版者	MDPI
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/159553
专题	物质科学与技术学院_特聘教授组_杨辉组物质科学与技术学院_博士生
通讯作者	Liu, Jianping; Yang, Hui
作者单位	1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai 201210, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Wu, Peng,Liu, Jianping,Jiang, Lingrong,et al. Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate[J]. NANOMATERIALS,2022,12(3).
APA	Wu, Peng.,Liu, Jianping.,Jiang, Lingrong.,Hu, Lei.,Ren, Xiaoyu.,...&Yang, Hui.(2022).Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate.NANOMATERIALS,12(3).
MLA	Wu, Peng,et al."Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate".NANOMATERIALS 12.3(2022).