ShanghaiTech University Knowledge Management System
| Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate | |
| 2022-02 | |
| Source Publication | NANOMATERIALS
 |
| EISSN | 2079-4991 |
| Volume | 12Issue:3 |
| Status | 已发表 |
| DOI | 10.3390/nano12030478 |
| Abstract | Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on a step motion model successfully explain the growth behaviors on stripes. These findings can be applied to control the surface kinetics of devices such as laser diodes grown on patterned substrate. |
| Keyword | step motions spiral growth island growth patterned substrate |
| URL | 查看原文 |
| Indexed By | SCI ; SCIE |
| Language | 英语 |
| Funding Project | Key Research and Development Program of Guangdong Province[2020B090922001] ; National Key Research and Development Program of China[2017YFE0131500] ; National Natural Science Foundation of China[61834008] ; Key Research and Development Program of Jiangsu Province["BE2020004","BE2021008-1"] ; Guangdong Basic and Applied Basic Research Foundation[2019B1515120091] |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000756545000001 |
| Publisher | MDPI |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/159553 |
| Collection | 物质科学与技术学院_特聘教授组_杨辉组 物质科学与技术学院_博士生 |
| Corresponding Author | Liu, Jianping; Yang, Hui |
| Affiliation | 1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai 201210, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China |
| First Author Affilication | School of Physical Science and Technology |
| Corresponding Author Affilication | School of Physical Science and Technology |
| Recommended Citation GB/T 7714 | Wu, Peng,Liu, Jianping,Jiang, Lingrong,et al. Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate[J]. NANOMATERIALS,2022,12(3). |
| APA | Wu, Peng.,Liu, Jianping.,Jiang, Lingrong.,Hu, Lei.,Ren, Xiaoyu.,...&Yang, Hui.(2022).Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate.NANOMATERIALS,12(3). |
| MLA | Wu, Peng,et al."Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate".NANOMATERIALS 12.3(2022). |
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