Heterodyne terahertz detection based on antenna-coupled AlGaN/GaN high-electron-mobility transistor

doi:10.1063/5.0063650

	Heterodyne terahertz detection based on antenna-coupled AlGaN/GaN high-electron-mobility transistor
	Feng, Wei 1,2,3; Zhu, Yifan 1,2,3; Ding, Qingfeng2,3,4 ; Zhu, Kaiqiang 5; Sun, Jiandong 1,2,3; Zhang, Jinfeng 2,3; Li, Xinxing 2,3; Shangguan, Yang 2,3; Jin, Lin 2,3; Qin, Hua1,2,3,4
	2022-01-31
发表期刊	APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year])
ISSN	0003-6951
EISSN	1077-3118
卷号	120 期号:5
发表状态	已发表
DOI	10.1063/5.0063650
摘要	In this article, we report an antenna-coupled AlGaN/GaN high-electron-mobility transistor integrated on a hyper-hemispheric silicon lens for heterodyne detection in a 340 GHz band at room temperature. The responsivity, elevated shot noise, flicker noise, and dynamic source-drain resistance for homodyne and heterodyne detection are characterized and analyzed at different local terahertz (LO) power levels. With a LO power of only -3.9 dBm, the detector offers a conversion loss less than 28 dB and a noise-equivalent power (NEP) about -132 dBm/Hz. A threshold LO power about -5 dBm is identified above which the shot noise becomes the dominant noise source, and the intermediate-frequency response is strongly suppressed. The elevated noise and the saturation in responsivity are found to be closely related to the strong direct-current homodyne current and the charge modulation/accumulation by the LO signal. Possible solutions are discussed to further reduce the NEP and the conversion loss.
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收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	National Natural Science Foundation of China[61771466,61775231,61975227] ; Key R&D Program of Jiangsu Province[BE2018005] ; Youth Innovation Promotion Association CAS[2017372]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000749885200006
出版者	AIP Publishing
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/154094
专题	物质科学与技术学院_博士生物质科学与技术学院_特聘教授组_秦华组
通讯作者	Qin, Hua
作者单位	1.Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China 3.Key Lab Nanodevices Jiangsu Prov, Suzhou 215123, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing Key Lab Millimeter Wave & Terahertz Tech, Beijing 100081, Peoples R China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Feng, Wei,Zhu, Yifan,Ding, Qingfeng,et al. Heterodyne terahertz detection based on antenna-coupled AlGaN/GaN high-electron-mobility transistor[J]. APPLIED PHYSICS LETTERS,2022,120(5).
APA	Feng, Wei.,Zhu, Yifan.,Ding, Qingfeng.,Zhu, Kaiqiang.,Sun, Jiandong.,...&Qin, Hua.(2022).Heterodyne terahertz detection based on antenna-coupled AlGaN/GaN high-electron-mobility transistor.APPLIED PHYSICS LETTERS,120(5).
MLA	Feng, Wei,et al."Heterodyne terahertz detection based on antenna-coupled AlGaN/GaN high-electron-mobility transistor".APPLIED PHYSICS LETTERS 120.5(2022).