Ferromagnetic resonance and spin-wave exchange stiffness of FeGaB/Al2O3 multilayer thin film stack for microwave applications
2022-03-01
发表期刊MATERIALS CHEMISTRY AND PHYSICS (IF:4.3[JCR-2023],4.1[5-Year])
ISSN0254-0584
EISSN1879-3312
卷号279
发表状态已发表
DOI10.1016/j.matchemphys.2022.125776
摘要

In this article, we have illustrated the deposition of multilayer film stack of Ta (5 nm)/[FeGaB (15 nm)/Al2O3 (3 nm)] (n)/Ta (3 nm)/Al2O3 (2 nm); n = 1,5, and 10, onto Si substrates, and studied magnetodynamic properties with multilayer thickness and temperature dependence. The results of surface morphology of thin film stacks suggest dipolar coupling generates for n = 5 and 10 thin film stack, which influence the ferromagnetic absorption results. From results of ferromagnetic resonance spectroscopy (FMR), the resonance peak for each excitation frequency provides the effective magnetization, the gyromagnetic ratio and damping factor. The damping factor for multilayer stack n = 1 shows a lower value compared to the other two samples. The multilayer stack provides perpendicular surface magnetic anisotropy (k(s)) from thickness dependence of effective magnetization. The analysis of spin-wave resonance spectra at multiple frequencies allows manipulate the exchange stiffness (D) of multilayer film stack n = 5 and n = 10 and temperature dependence the exchange stiffness follows the itinerant-electron model (T-2 law) and suggests electron - magnon scattering exists in the thin film stack.

关键词Dipolar coupling Magnetization Damping factor Perpendicular standing spin-wave Exchange stiffness of spin-wave Electron - magnon scattering
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收录类别SCI ; EI ; SCIE
语种英语
资助项目National Natural Science Foundation of China[61874073] ; Natural Science Foundation of Shanghai[19ZR1477000]
WOS研究方向Materials Science
WOS类目Materials Science, Multidisciplinary
WOS记录号WOS:000763730700002
出版者ELSEVIER SCIENCE SA
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/153590
专题信息科学与技术学院_博士生
信息科学与技术学院_PI研究组_吴涛组
通讯作者Karampuri, Yadagiri; Wu, Tao
作者单位
1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China;
2.Shanghai Institute of Microsystems and Information Technology, Chinese Academic of Sciences, Shanghai, China;
3.University of Chinese Academy of Sciences, Shanghai, China
第一作者单位信息科学与技术学院
通讯作者单位信息科学与技术学院
第一作者的第一单位信息科学与技术学院
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Karampuri, Yadagiri,Wang, Yuxi,Wu, Tao. Ferromagnetic resonance and spin-wave exchange stiffness of FeGaB/Al2O3 multilayer thin film stack for microwave applications[J]. MATERIALS CHEMISTRY AND PHYSICS,2022,279.
APA Karampuri, Yadagiri,Wang, Yuxi,&Wu, Tao.(2022).Ferromagnetic resonance and spin-wave exchange stiffness of FeGaB/Al2O3 multilayer thin film stack for microwave applications.MATERIALS CHEMISTRY AND PHYSICS,279.
MLA Karampuri, Yadagiri,et al."Ferromagnetic resonance and spin-wave exchange stiffness of FeGaB/Al2O3 multilayer thin film stack for microwave applications".MATERIALS CHEMISTRY AND PHYSICS 279(2022).
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