Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy

doi:10.1021/acsnano.6b08704

	Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy
	Tian, Zhen1,2,3 ; Guo, Chenglei 1,2,3; Zhao, Mingxing2,3 ; Li, Ranran2,3 ; Xue, Jiamin1,2,3,4
	2017-02
发表期刊	ACS NANO (IF:15.8[JCR-2023],16.2[5-Year])
ISSN	1936-0851
卷号	11 期号:2 页码:2219-2226
发表状态	已发表
DOI	10.1021/acsnano.6b08704
摘要	We study the anisotropic electronic properties of two-dimensional (2D) SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscopy and polarized Raman spectroscopy, we identify the zigzag and armchair directions of the as-grown 2D crystals. The 2D SnS field-effect transistors with a cross Hall-bar structure are fabricated. They show heavily hole-doped (similar to 10(19) cm(-3)) conductivity with strong in-plane anisotropy. At room temperature, the mobility along the zigzag direction exceeds 20 cm(2) V-1 s(-1), which can be up to 1.7 times that in the armchair direction. This strong anisotropy is then explained by the effective mass ratio along the two directions and agrees well with previous theoretical predictions. Temperature-dependent carrier density determined the acceptor energy level to be similar to 45 meV above the valence band maximum. This value matches a calculated defect level of 42 meV for Sn vacancies, indicating that Sn deficiency is the main cause of the p-type conductivity.
关键词	2D SnS anisotropic electronic transport field-effect transistor
收录类别	SCI ; EI
语种	英语
资助项目	Strategic Priority Research Program of the Chinese Academy of Sciences[XDB04030000]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000395357300118
出版者	AMER CHEMICAL SOC
EI入藏号	20171003413244
EI主题词	Anisotropy ; Electronic properties ; High resolution transmission electron microscopy ; Semiconducting films ; Tin ; Transmission electron microscopy
EI分类号	Tin and Alloys:546.2 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Physical Properties of Gases, Liquids and Solids:931.2
WOS关键词	BLACK PHOSPHORUS ; 2D SEMICONDUCTOR ; GRAPHENE ; MODES ; FILM ; GAP
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1517
专题	物质科学与技术学院物质科学与技术学院_PI研究组_薛加民组物质科学与技术学院_博士生
通讯作者	Xue, Jiamin
作者单位	1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Tian, Zhen,Guo, Chenglei,Zhao, Mingxing,et al. Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy[J]. ACS NANO,2017,11(2):2219-2226.
APA	Tian, Zhen,Guo, Chenglei,Zhao, Mingxing,Li, Ranran,&Xue, Jiamin.(2017).Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy.ACS NANO,11(2),2219-2226.
MLA	Tian, Zhen,et al."Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy".ACS NANO 11.2(2017):2219-2226.