Characterization method of PN junction region expansion in HgCdTe device

doi:10.11972/j.issn.1001-9014.2017.01.011

	Characterization method of PN junction region expansion in HgCdTe device
	Weng Bin1,2 ; Zhou Song-Min 1; Wang Xi 1,3; Chen Yi-Yu 1,3; Li Hao 1,3; Lin Chun1
	2017-02
发表期刊	红外与毫米波学报 (IF:0.6[JCR-2023],0.5[5-Year])
ISSN	1001-9014
卷号	36 期号:1 页码:54-59
发表状态	已发表
DOI	10.11972/j.issn.1001-9014.2017.01.011
摘要	The laser beam induced current (LBIC) and the I-V test at liquid-nitrogen temperature were applied to characterize the PN junction region extension effect in the HgCdTe device processing. By LBIC and I-V test, it was found that the area of n-type region of p-type HgCdTe material implanted by Boron ion or etched by ion beam milling is larger than the nominal values. The transverse dimension of n-type region was measured. At the same time, it was found that the results obtained by both methods were comparable.
关键词	HgCdTe laser beam induced current I-V test Boron ion implantation dry etching
收录类别	SCI ; 北大核心 ; EI
语种	中文
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000395722400011
出版者	SCIENCE PRESS
EI入藏号	20171303511233
EI主题词	Boron ; Dry etching ; Ion beams ; Ion implantation ; Ions
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Laser Beam Interactions:744.8 ; Chemical Reactions:802.2 ; High Energy Physics:932.1
WOS关键词	BEAM-INDUCED CURRENT ; CONVERSION
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1514
专题	信息科学与技术学院信息科学与技术学院_特聘教授组_林春组信息科学与技术学院_硕士生
通讯作者	Lin Chun
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China 2.Shanghaitech Univ, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
第一作者单位	上海科技大学
推荐引用方式 GB/T 7714	Weng Bin,Zhou Song-Min,Wang Xi,et al. Characterization method of PN junction region expansion in HgCdTe device[J]. 红外与毫米波学报,2017,36(1):54-59.
APA	Weng Bin,Zhou Song-Min,Wang Xi,Chen Yi-Yu,Li Hao,&Lin Chun.(2017).Characterization method of PN junction region expansion in HgCdTe device.红外与毫米波学报,36(1),54-59.
MLA	Weng Bin,et al."Characterization method of PN junction region expansion in HgCdTe device".红外与毫米波学报 36.1(2017):54-59.