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Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films | |
2022-01-25 | |
发表期刊 | ACS NANO |
ISSN | 1936-0851 |
EISSN | 1936-086X |
卷号 | 16期号:1 |
发表状态 | 已发表 |
DOI | 10.1021/acsnano.1c08874 |
摘要 | The quantized version of the anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. Here we report the thickness-tailored quantum anomalous Hall (QAH) effect in Cr-doped (Bi,Sb)(2)Te-3 thin films by tuning the system across the two-dimensional (2D) limit. In addition to the Chern number-related QAH phase transition, we also demonstrate that the induced hybridization gap plays an indispensable role in determining the ground magnetic state of the MTIs; namely, the spontaneous magnetization owing to considerable Van Vleck spin susceptibility guarantees the zero-field QAH state with unitary scaling law in thick samples, while the quantization of the Hall conductance can only be achieved with the assistance of external magnetic fields in ultrathin films. The modulation of topology and magnetism through structural engineering may provide useful guidance for the pursuit of other QAH-based phase diagrams and functionalities. |
关键词 | magnetic topological insulators quantum anomalous Hall effect magnetic exchange coupling Chern number Van Vleck spin susceptibility structural engineering |
URL | 查看原文 |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | National Key Research and Development Program of China[2017YFA0305400] ; National Natural Science Foundation of China[61874172,11974327,11674024,11974098] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDA18010000] ; Shanghai Rising-Star Program[21QA1406000] |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS记录号 | WOS:000743230200001 |
出版者 | AMER CHEMICAL SOC |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/150312 |
专题 | 物质科学与技术学院_博士生 物质科学与技术学院_PI研究组_柳仲楷组 信息科学与技术学院_PI研究组_寇煦丰组 信息科学与技术学院_硕士生 信息科学与技术学院_博士生 物质科学与技术学院_公共科研平台_拓扑物理实验室 |
共同第一作者 | Liu, Zheng; Zhang, Peng |
通讯作者 | Qiao, Zhenhua; Kou, Xufeng |
作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 2.Univ Chinese Acad Sci, Beijing 101408, Peoples R China 3.Univ Sci & Technol China, Int Ctr Quantum Design Funct Mat, Hefei Natl Lab Phys Sci Microscale, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China 4.Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China 5.Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA 6.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 20031, Peoples R China 7.Hebei Normal Univ, Coll Phys, Shijiazhuang 050024, Hebei, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院; 信息科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Ji, Yuchen,Liu, Zheng,Zhang, Peng,et al. Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films[J]. ACS NANO,2022,16(1). |
APA | Ji, Yuchen.,Liu, Zheng.,Zhang, Peng.,Li, Lun.,Qi, Shifei.,...&Kou, Xufeng.(2022).Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films.ACS NANO,16(1). |
MLA | Ji, Yuchen,et al."Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films".ACS NANO 16.1(2022). |
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