Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations
2022-01-02
发表期刊SENSORS
ISSN1424-8220
EISSN1424-8220
卷号22期号:2
发表状态已发表
DOI10.3390/s22020677
摘要

Benefiting from the inherent capacity for detecting longer wavelengths inaccessible to human eyes, infrared photodetectors have found numerous applications in both military and daily life, such as individual combat weapons, automatic driving sensors and night-vision devices. However, the imperfect material growth and incomplete device manufacturing impose an inevitable restriction on the further improvement of infrared photodetectors. The advent of artificial microstructures, especially metasurfaces, featuring with strong light field enhancement and multifunctional properties in manipulating the light–matter interactions on subwavelength scale, have promised great potential in overcoming the bottlenecks faced by conventional infrared detectors. Additionally, metasurfaces exhibit versatile and flexible integration with existing detection semiconductors. In this paper, we start with a review of conventionally bulky and recently emerging two-dimensional material-based infrared photodetectors, i.e., InGaAs, HgCdTe, graphene, transition metal dichalcogenides and black phosphorus devices. As to the challenges the detectors are facing, we further discuss the recent progress on the metasurfaces integrated on the photodetectors and demonstrate their role in improving device performance. All information provided in this paper aims to open a new way to boost high-performance infrared photodetectors. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

关键词Cadmium alloys Gallium alloys II-VI semiconductors Indium alloys Infrared detectors Mercury amalgams Military applications Photons Semiconducting indium gallium arsenide Transition metals Field manipulation Human eye Infrared photodetector Long wavelength Metasurface Metasurface integration Optical field Optical field manipulation Performance Recent progress
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收录类别SCI ; SCIE ; EI
语种英语
资助项目National Key Research and Development Program of China[
WOS研究方向Chemistry ; Engineering ; Instruments & Instrumentation
WOS类目Chemistry, Analytical ; Engineering, Electrical & Electronic ; Instruments & Instrumentation
WOS记录号WOS:000747040500001
出版者MDPI
EI入藏号20220311478382
EI主题词Semiconductor alloys
EI分类号404.1 Military Engineering ; 531 Metallurgy and Metallography ; 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 712.1 Semiconducting Materials ; 712.1.2 Compound Semiconducting Materials ; 931.3 Atomic and Molecular Physics ; 944.7 Radiation Measuring Instruments
原始文献类型Journal article (JA)
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/150303
专题物质科学与技术学院_硕士生
物质科学与技术学院_博士生
共同第一作者Wang, Jiuxu
通讯作者Li, Guanhai
作者单位
1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
2.Univ Chinese Acad Sci, Hangzhou Inst Adv Study, 1 Sub Lane Xiangshan, Hangzhou 310024, Peoples R China
3.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
5.Shanghai Res Ctr Quantum Sci, 99 Xiupu Rd, Shanghai 201315, Peoples R China
第一作者单位物质科学与技术学院
推荐引用方式
GB/T 7714
Chen, Jian,Wang, Jiuxu,Li, Xin,et al. Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations[J]. SENSORS,2022,22(2).
APA Chen, Jian.,Wang, Jiuxu.,Li, Xin.,Chen, Jin.,Yu, Feilong.,...&Lu, Wei.(2022).Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations.SENSORS,22(2).
MLA Chen, Jian,et al."Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations".SENSORS 22.2(2022).
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