Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates

doi:10.1016/j.apsusc.2016.12.056

	Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates
	Zou, Zhi-Qiang1 ; Li, Xu 2; Liu, Xiao-Yong 2; Shi, Kai-Juan 2; Guo, Xin-Qiu 2
	2017-03-31
发表期刊	APPLIED SURFACE SCIENCE (IF:6.3[JCR-2023],5.9[5-Year])
ISSN	0169-4332
卷号	399 页码:200-204
发表状态	已发表
DOI	10.1016/j.apsusc.2016.12.056
摘要	Metallic alpha-FeSi2 nanowires (NWs) are epitaxially grown on Si(110) at 650 degrees C Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up to 750 degrees C, which is much lower than that of the bulk alpha-FeSi2. With further increasing the annealing temperature, some NWs begin to shrink in length and transform into wider and higher semiconducting beta-FeSi2 nanorods or three-dimensional (3D) islands at 925 degrees C. The phase transformation is driven by the reduction in surface energy. On the other hand, some beta-FeSi2 NWs begin to dissolve and become thinner until disappearing. The growth of the beta-FeSi2 nanorods or 3D nanocrystals follows the Ostwald ripening mechanism, i.e., the large islands grow in size at the expense of the small ones. X-ray photoelectron spectroscopy study shows that the Fe 2p peaks of beta-FeSi2 nanocrystals exhibit a negative shift of 0.2 eV with respect to the alpha-FeSi2 NWs. (C) 2016 Elsevier B.V. All rights reserved.
关键词	Nanowires Epitaxial growth Scanning tunneling microscopy Thermal stability Phase transformation
收录类别	SCI ; EI
语种	英语
资助项目	Innovation Program of Shanghai Municipal Education Commission[12ZZ025]
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000393001700022
出版者	ELSEVIER SCIENCE BV
EI入藏号	20165203167970
EI主题词	Epitaxial growth ; Nanocrystals ; Nanorods ; Nanowires ; Ostwald ripening ; Phase transitions ; Scanning tunneling microscopy ; Silicides ; Thermodynamic stability
EI分类号	Thermodynamics:641.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; Solid State Physics:933 ; Crystal Growth:933.1.2
WOS关键词	ELECTRONIC-PROPERTIES ; FESI2 ; SPECTROSCOPY ; BETA-FESI2 ; MOSSBAUER ; SURFACES ; SI(001)
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1452
专题	物质科学与技术学院_公共科研平台_分析测试平台
通讯作者	Zou, Zhi-Qiang
作者单位	1.ShanghaiTech Univ, Sch Phys Sci & Technol, 100 Haike Rd, Shanghai 201210, Peoples R China 2.Shanghai Jiao Tong Univ, Analyt & Testing Ctr, 800 Dongchuan Rd, Shanghai 200240, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zou, Zhi-Qiang,Li, Xu,Liu, Xiao-Yong,et al. Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates[J]. APPLIED SURFACE SCIENCE,2017,399:200-204.
APA	Zou, Zhi-Qiang,Li, Xu,Liu, Xiao-Yong,Shi, Kai-Juan,&Guo, Xin-Qiu.(2017).Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates.APPLIED SURFACE SCIENCE,399,200-204.
MLA	Zou, Zhi-Qiang,et al."Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates".APPLIED SURFACE SCIENCE 399(2017):200-204.