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Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022
Authors:
Gu, Yitian
;
Huang, Wei
;
Zhang, Yu
;
Sui, Jin
;
Wang, Yangqian
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Submit date:2022/05/18
Logic gates
HEMTs
Threshold voltage
Temperature measurement
Voltage measurement
MODFETs
Performance evaluation
Dynamic characteristics
GaN HEMT
low temperature electronics
p-type GaN gate
Timing Performance Simulation for 3D 4H-SiC Detector
期刊论文
MICROMACHINES, 2022, 卷号: 13, 期号: 1
Authors:
Tan, Yuhang
;
Yang, Tao
;
Liu, Kai
;
Wang, Congcong
;
Zhang, Xiyuan
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Adobe PDF(1277Kb)
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View/Download:65/12
  |  
Submit date:2022/01/21
High energy physics
Silicon carbide
Software reliability
Thermal conductivity
Wide band gap semiconductors
3d 4h-SiC detector
Atomic displacement
High thermal conductivity
High-energy physics
Performance simulation
RASER
SiC detectors
Temperature environments
Time-resolution
Timing performance
A review on GaN-based two-terminal devices grown on Si substrates
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 869, 期号: 15, 页码: 159214
Authors:
Zhang, Yu
;
Liu, Chao
;
Zhu, Min
;
Zhang, Yuliang
;
Zou, Xinbo
Adobe PDF(36302Kb)
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View/Download:32/0
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Submit date:2021/12/03
Energy gap
III
V semiconductors
Light emitting diodes
Schottky barrier diodes
Silicon
Substrates
Barrier diodes
Design technologies
Device design
Lightemitting diode
Optoelectronic applications
PiN diode
Power conversion
Schottky barriers
Si substrates
Two
terminal devices
GaN
Two-terminal devices
SBDs
p-i-n diodes
LEDs
Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021
Authors:
Gu,Yitian
;
Wang,Yangqian
;
Chen,Jiaxiang
;
Chen,Baile
;
Wang,Maojun
Adobe PDF(2431Kb)
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Submit date:2021/05/26
Carbon-doped GaN
cryogenic temperatures
dynamic characteristics
GaN high electron mobility transistor (HEMT)
low-temperature electronics
Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic Temperatures
期刊论文
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021
Authors:
Guo,Haowen
;
Zhou,Junmin
;
Wang,Maojun
;
Zou,Xinbo
Adobe PDF(2774Kb)
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Submit date:2021/05/26
Amplitude compression
cryogenic temperature
gallium nitride (GaN)
high electron-mobility transistor (HEMT)
phase compression
Emission Kinetics of Electron Traps in Vertical β-Ga2O3 Schottky Diodes via Deep Level Transient Spectroscopy
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 5, 页码: 055015
Authors:
Chen,Jiaxiang
;
Luo,Haoxun
;
Qu,HaoLan
;
Zhu,Min
;
Guo,Haowen
Adobe PDF(1827Kb)
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View/Download:138/2
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Submit date:2021/05/26
Ga2O3
DLTS
Schottky diode
emission kinetics
single trap
Electric fields
Gallium compounds
Temperature distribution
Tin metallography
Emission process
Emission time
Enhanced Emission
Poole
Frenkel effect
Single electron
Temperature dependence
Time constants
Trap emissions
Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photodetector
期刊论文
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2021, 卷号: 39, 期号: 5, 页码: 1489-1496
Authors:
Shen, Zhijian
;
Deng, Zhuo
;
Zhao, Xuyi
;
Huang, Jian
;
Yao, Lu
Adobe PDF(2586Kb)
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View/Download:87/1
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Submit date:2021/04/01
Gallium arsenide
Quantum dots
Temperature measurement
Quantum cascade lasers
Photodetectors
Substrates
Quantum dot lasers
GaAs substrate
Long-wave infrared photodetector
photoluminescence
quantum cascade photodetector
sub-monolayer quantum dot
Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate
期刊论文
APPLIED PHYSICS LETTERS, 2021, 卷号: 118, 期号: 8, 页码: #VALUE!
Authors:
Shen, Zhijian
;
Deng, Zhuo
;
Zhao, Xuyi
;
Huang, Jian
;
Cao, Chunfang
Adobe PDF(1597Kb)
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View/Download:111/1
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Submit date:2021/04/01
Analysis of AM-to-PM conversion in MUTC photodiodes based on an equivalent circuit model
期刊论文
OPTICS EXPRESS, 2021, 卷号: 29, 期号: 21, 页码: 33582-33591
Authors:
Song, Zhenjie
;
Zhou, Zhiqi
;
Huang, Jian
;
Zou, Xinbo
;
Yang, Chun
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View/Download:27/0
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Submit date:2021/11/05
Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 10, 页码: 3992-3998
Authors:
Zhang, Yuliang
;
Zhang, Xu
;
Zhu, Min
;
Chen, Jiaxiang
;
Tang, Chak Wah
Adobe PDF(2117Kb)
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View/Download:61/0
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Submit date:2020/11/02
Conduction instability
deep-level transient spectroscopy (DLTS) measurement
dynamic R-ON
GaN quasi-vertical p-i-n diodes
pulsedmeasurements
trap effects