Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy

doi:10.1088/2053-1591/aa6bbf

	Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy
	Li, Yang 1,2,3; Song, Yuxin 3; Zhang, Zhenpu3,4 ; Li, Yaoyao 3; Chen, Qimiao 3,5; Zha, Fangxing 1,2; Wang, Shumin 3,6
	2017-04
发表期刊	MATERIALS RESEARCH EXPRESS (IF:1.8[JCR-2023],1.9[5-Year])
ISSN	2053-1591
卷号	4 期号:4
发表状态	已发表
DOI	10.1088/2053-1591/aa6bbf
摘要	Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different coverage rates of Ge nanostructures on GaSb are achieved and investigated. It is found the growth of Ge on GaSb follows 2D growth mode. The crystal lattice of the sub-monolayer Ge nanostructures is coherent with that of the GaSb, inferring as large as 7.74% tensile strain in the Ge nanostructures.
关键词	scanning tunneling microscopy tensile-strained Ge nanostructure
收录类别	SCI ; EI
语种	英语
资助项目	Creative Research Group Project of Natural Science Foundation of China[61321492]
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:000400009300002
出版者	IOP PUBLISHING LTD
EI入藏号	20191306679861
EI主题词	Antimony compounds ; III-V semiconductors ; Molecular beam epitaxy ; Monolayers ; Nanostructures ; Scanning tunneling microscopy ; Semiconducting germanium ; Tensile strain
EI分类号	Single Element Semiconducting Materials:712.1.1 ; Nanotechnology:761 ; Mechanics:931.1 ; Atomic and Molecular Physics:931.3 ; Solid State Physics:933 ; Crystal Growth:933.1.2
WOS关键词	SPECTROSCOPY
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1429
专题	物质科学与技术学院物质科学与技术学院_博士生
通讯作者	Li, Yang
作者单位	1.Shanghai Univ, Phys Dept, Shanghai 200444, Peoples R China 2.Shanghai Univ, Lab Microstruct, Shanghai 200444, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Univ Chinese Acad Sci, Beijing, Peoples R China 6.Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
推荐引用方式 GB/T 7714	Li, Yang,Song, Yuxin,Zhang, Zhenpu,et al. Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy[J]. MATERIALS RESEARCH EXPRESS,2017,4(4).
APA	Li, Yang.,Song, Yuxin.,Zhang, Zhenpu.,Li, Yaoyao.,Chen, Qimiao.,...&Wang, Shumin.(2017).Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy.MATERIALS RESEARCH EXPRESS,4(4).
MLA	Li, Yang,et al."Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy".MATERIALS RESEARCH EXPRESS 4.4(2017).