Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride
Jiang, Lanlan1; Shi, Yuanyuan1,2; Hui, Fei1,4; Tang, Kechao3; Wu, Qian1; Pan, Chengbin1; Jing, Xu1,5,6; Uppal, Hasan7; Palumbo, Felix8; Lu, Guangyuan9; Wu, Tianru9; Wang, Haomin9; Villena, Marco A.1; Xie, Xiaoming9,10; McIntyre, Paul C.3; Lanza, Mario1
2017-11-15
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume9Issue:45Pages:39758-39770
Status已发表
DOI10.1021/acsami.7b10948
AbstractInsulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood. In this work, the dielectric breakdown process of multilayer hexagonal 0 boron nitride (h-BN) is analyzed on the nanoscale and on the device level, and the experimental results are studied via theoretical models. It is found that under electrical stress, local charge accumulation and charge trapping/detrapping are the onset mechanisms for dielectric BD formation. By means of conductive atomic force microscopy, the BD event was triggered at several locations on the surface of different dielectrics (SiO2, HfO2, Al2O3, multilayer h-BN, and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with the one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally driven catastrophic BD. These results point to monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.
Keyworddielectric breakdown 2D materials insulator hexagonal boron nitride CAFM
Indexed BySCI ; EI
Language英语
Funding ProjectNational Technological University (UTN.BA)[PIDUTN2014/UTI2423]
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000416203800069
PublisherAMER CHEMICAL SOC
EI Accession Number20174704449014
EI KeywordsAtomic force microscopy ; Boron nitride ; Degradation ; Dielectric materials ; Digital devices ; Electric breakdown ; Electron devices ; Electronic equipment ; Hafnium oxides ; Monolayers ; Multilayers ; Nitrides ; Optical properties ; Silica ; Thermal conductivity ; Thermoelectric equipment
EI Classification NumberThermoelectric Energy:615.4 ; Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Dielectric Materials:708.1 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2
WOS KeywordSUPERIOR THERMAL-CONDUCTIVITY ; TEMPERATURE-DEPENDENT RAMAN ; FIELD-EFFECT TRANSISTORS ; DEGRADATION ; NANOSCALE ; FILMS ; SIO2 ; GROWTH
Original Document TypeArticle
Citation statistics
Cited Times:18[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://kms.shanghaitech.edu.cn/handle/2MSLDSTB/14287
Collection物质科学与技术学院_特聘教授组_谢晓明组
Corresponding AuthorLanza, Mario
Affiliation1.Soochow Univ, Inst Funct Nano & Soft Mat, Collaborat Innovat Ctr Suzhou Nanosci & Technol, 199 Ren Ai Rd, Suzhou 215123, Peoples R China
2.Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
3.Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
4.MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA
5.Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
6.Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78758 USA
7.Univ Manchester, Microelect & Nanostruct, Sackville St, Manchester M13 9PL, Lancs, England
8.UTN CNEA, Natl Sci & Tech Res Council CONICET, Godoy Cruz 2290, Buenos Aires, DF, Argentina
9.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
10.ShanghaiTech Univ, Sch Phys Sci & Technol, 319 Yueyang Rd, Shanghai 201210, Peoples R China
Recommended Citation
GB/T 7714
Jiang, Lanlan,Shi, Yuanyuan,Hui, Fei,et al. Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(45):39758-39770.
APA Jiang, Lanlan.,Shi, Yuanyuan.,Hui, Fei.,Tang, Kechao.,Wu, Qian.,...&Lanza, Mario.(2017).Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride.ACS APPLIED MATERIALS & INTERFACES,9(45),39758-39770.
MLA Jiang, Lanlan,et al."Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride".ACS APPLIED MATERIALS & INTERFACES 9.45(2017):39758-39770.
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