Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy
Ye, Zhenyu1; Cui, Shengtao2,3; Shu, Tianyu1; Ma, Songsong1; Liu, Yang1; Sun, Zhe4; Luo, Jun-Wei5; Wu, Huizhen1
2017-04-24
Source PublicationPHYSICAL REVIEW B
ISSN2469-9950
Volume95Issue:16
Status已发表
DOI10.1103/PhysRevB.95.165203
AbstractUsing angle-resolved photoemission spectroscopy (ARPES), we studied bulk and surface electronic band structures of narrow-gap semiconductor lead telluride (PbTe) thin films grown by molecular beam epitaxy both perpendicular and parallel to the Gamma-L direction. The comparison of ARPES data with the first-principles calculation reveals the details of band structures, orbital characters, spin-orbit splitting energies, and surface states. The photon-energy-dependent spectra show the bulk character. Both the L and Sigma valence bands are observed and their energy difference is determined. The spin-orbit splitting energies at L and Gamma points are 0.62 eV and 0.88 eV, respectively. The surface states below and close to the valence band maximum are identified. The valence bands are composed of a mixture of Pb 6s and Te 5 p(z) orbitals with dominant in-plane even parity, which is attributed to the layered distortion in the vicinity of the PbTe (111) surface. These findings provide insights into PbTe fundamental properties and shall benefit relevant thermoelectric and optoelectronic applications.
Indexed BySCI
Language英语
Funding ProjectNational RAMP;D Program of the MOST, China[2016YFA0300203]
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000400066400010
PublisherAMER PHYSICAL SOC
WOS KeywordTOPOLOGICAL CRYSTALLINE INSULATOR ; PERFORMANCE BULK THERMOELECTRICS ; LEAD-CHALCOGENIDES ; SNTE ; PBSE ; PSEUDOPOTENTIALS ; LASERS ; GETE ; SNSE
Original Document TypeArticle
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1405
Collection物质科学与技术学院_PI研究组_柳仲楷组
Corresponding AuthorWu, Huizhen
Affiliation1.Zhejiang Univ, State Key Lab Silicon Mat, Dept Phys, Hangzhou 310027, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201203, Peoples R China
3.CAS Shanghai Sci Res Ctr, Shanghai 201203, Peoples R China
4.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
5.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Ye, Zhenyu,Cui, Shengtao,Shu, Tianyu,et al. Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy[J]. PHYSICAL REVIEW B,2017,95(16).
APA Ye, Zhenyu.,Cui, Shengtao.,Shu, Tianyu.,Ma, Songsong.,Liu, Yang.,...&Wu, Huizhen.(2017).Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy.PHYSICAL REVIEW B,95(16).
MLA Ye, Zhenyu,et al."Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy".PHYSICAL REVIEW B 95.16(2017).
Files in This Item: Download All
File Name/Size DocType Version Access License
10.1103@PhysRevB.95.(1213KB)期刊论文作者原稿开放获取UnknownView Download
Related Services
Usage statistics
Scholar Google
Similar articles in Scholar Google
[Ye, Zhenyu]'s Articles
[Cui, Shengtao]'s Articles
[Shu, Tianyu]'s Articles
Baidu academic
Similar articles in Baidu academic
[Ye, Zhenyu]'s Articles
[Cui, Shengtao]'s Articles
[Shu, Tianyu]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Ye, Zhenyu]'s Articles
[Cui, Shengtao]'s Articles
[Shu, Tianyu]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: 10.1103@PhysRevB.95.165203.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.