C3N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties

doi:10.1002/adma.201605625

	C3N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties
	Yang, Siwei 1; Li, Wei 1,2,3; Ye, Caichao 1; Wang, Gang 1; Tian, He 4,5; Zhu, Chong 1; He, Peng 1; Ding, Guqiao 1; Xie, Xiaoming1,6 ; Liu, Yang 7; Lifshitz, Yeshayahu 7,8; Lee, Shuit-Tong 7; Kang, Zhenhui 7; Jiang, Mianheng1,6
	2017-04-25
发表期刊	ADVANCED MATERIALS (IF:27.4[JCR-2023],30.2[5-Year])
ISSN	0935-9648
卷号	29 期号:16
发表状态	已发表
DOI	10.1002/adma.201605625
摘要	Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large-scale synthesis of C3N, a 2D crystalline, hole-free extension of graphene, its structural characterization, and some of its unique properties. C3N is fabricated by poly-merization of 2,3-diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D-6h-symmetry. C3N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back-gated field-effect transistors made of single-layer C3N display an on-off current ratio reaching 5.5 x 10(10). Surprisingly, C3N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications.
收录类别	SCI ; EI
语种	英语
资助项目	Specialized Research Fund for the Doctoral Program of Higher Education[20123201110018]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000400024500024
出版者	WILEY-V C H VERLAG GMBH
EI入藏号	20170903395854
EI主题词	Carbon ; Characterization ; Crystalline materials ; Energy gap ; Ferromagnetic materials ; Ferromagnetism ; Field effect transistors ; Graphene ; Honeycomb structures ; Semiconductor materials ; Semiconductor quantum dots
WOS关键词	GRAPHENE QUANTUM DOTS ; TRANSISTORS ; PHOTOCATALYST ; DEVICES ; FILMS ; WATER
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1404
专题	物质科学与技术学院_特聘教授组_谢晓明组物质科学与技术学院
通讯作者	Ding, Guqiao; Xie, Xiaoming; Lee, Shuit-Tong; Kang, Zhenhui
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China 2.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China 3.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 4.Zhejiang Univ, Ctr Electron Microscopy, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China 5.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China 6.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 7.Soochow Univ, FUNSOM, Inst Funct Nano & Soft Mat, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China 8.Technion Israel Inst Technol, Dept Mat Sci & Engn, IL-3200003 Haifa, Israel
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Yang, Siwei,Li, Wei,Ye, Caichao,et al. C3N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties[J]. ADVANCED MATERIALS,2017,29(16).
APA	Yang, Siwei.,Li, Wei.,Ye, Caichao.,Wang, Gang.,Tian, He.,...&Jiang, Mianheng.(2017).C3N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties.ADVANCED MATERIALS,29(16).
MLA	Yang, Siwei,et al."C3N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties".ADVANCED MATERIALS 29.16(2017).