Measurement of the energy-band relations of stabilized Si photoanodes using operando ambient pressure X-ray photoelectron spectroscopy

doi:10.1149/06606.0105ecst

	Measurement of the energy-band relations of stabilized Si photoanodes using operando ambient pressure X-ray photoelectron spectroscopy
	Richter, M.H.1; Lichterman, M.F.1,2; Hu, S.1,2; Crumlin, E.J.3; Mayer, T.4; Axnanda, S.3; Favaro, M.1,3; Drisdell, W.1,3; Hussain, Z.3; Brunschwig, B.S.2,5; Lewis, N.S.1,2,5,6; Liu, Z.3,7,8 ; Lewerenz, H.-J.1
	2015
会议录名称	SYMPOSIUM ON PROCESSES AT THE SEMICONDUCTOR SOLUTION INTERFACE 6 - 227TH ECS MEETING
卷号	66
期号	6
页码	105-113
发表状态	已发表
DOI	10.1149/06606.0105ecst
摘要	The energy-band relations and electronic properties for the lightabsorber/ protection-layer stack of TiO2-stabilized Si photoanodes have been determined by ambient pressure x-ray synchrotron radiation photoelectron spectroscopy under an applied potential (operando), from single core-level emission lines. The experiments have also been complemented with laboratory-based monochromatic XPS data. Electrochemical parameters are additionally derived directly from x-ray photoemission data, and a method is presented to derive interface-state densities from such operando data. © The Electrochemical Society.
会议地点	Chicago, IL, United states
收录类别	EI
出版者	Electrochemical Society Inc.
EI入藏号	20152500954604
EI主题词	Band structure ; Electronic properties ; Interface states ; Photoelectrons ; Photons ; Radiation protection ; Synchrotron radiation
EI分类号	Electromagnetic Waves:711 ; Lasers:744 ; Chemistry:801 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; Particle Accelerators:932.1.1 ; Solid State Physics:933
原始文献类型	Conference article (CA)
引用统计	正在获取...
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/13412
专题	物质科学与技术学院大科学中心_PI研究组_刘志组
通讯作者	Lewerenz, H.-J.
作者单位	1.Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena; CA, United States 2.Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena; CA, United States 3.Lawrence Berkeley National Laboratory, Berkeley; CA, United States 4.Surface Science Division, Materials Science Department, Darmstadt University of Technology, Darmstadt, Germany 5.Beckman Institute, California Institute of Technology, Pasadena; CA, United States 6.Kavli Nanoscience Institute, California Institute of Technology, Pasadena; CA, United States 7.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 8.School of Physical Science and Technology, Shanghai Tech University, Shanghai, China
推荐引用方式 GB/T 7714	Richter, M.H.,Lichterman, M.F.,Hu, S.,et al. Measurement of the energy-band relations of stabilized Si photoanodes using operando ambient pressure X-ray photoelectron spectroscopy[C]:Electrochemical Society Inc.,2015:105-113.