Stacking driven Raman spectra change of carbon based 2D semiconductor C3N

doi:j.cclet.2021.09.098

	Stacking driven Raman spectra change of carbon based 2D semiconductor C3N
	Yang, Yucheng1,2,3 ; Wei, Wenya 4; He, Peng 2,3; Yang, Siwei 2,3; Yuan, Qinghong 4; Ding, Guqiao 2,3; Liu, Zhi 1,2; Xie, Xiaoming 2,3
	2021
发表期刊	CHINESE CHEMICAL LETTERS (IF:9.4[JCR-2023],7.3[5-Year])
ISSN	1001-8417
EISSN	1878-5964
卷号	33 期号:5 页码:2600-2604
发表状态	已发表
DOI	j.cclet.2021.09.098
摘要	As a two-dimensional carbon based semiconductor, C3N acts as a promising material in many application areas. However, the basic physical properties such as Raman spectrum properties of C3N is still not clear. In this paper, we clarify the Raman spectrum properties of multilayer C3N. Moreover, the stacking driven Raman spectra change of multilayer C3N is also discussed. (C) 2021 Published by Elsevier B.V. on behalf of Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences.
关键词	C3N Raman spectrum Carbon based semiconductor 2D materials Stacking structure
URL	查看原文
收录类别	SCI ; SCIE
语种	英语
WOS研究方向	Chemistry
WOS类目	Chemistry, Multidisciplinary
WOS记录号	WOS:000789384800062
出版者	ELSEVIER SCIENCE INC
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/128567
专题	物质科学与技术学院物质科学与技术学院_博士生
通讯作者	Yang, Siwei; Ding, Guqiao; Liu, Zhi
作者单位	1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China 4.East China Normal Univ, Sch Phys & Elect Sci, State Key Lab Precis Spect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Yang, Yucheng,Wei, Wenya,He, Peng,et al. Stacking driven Raman spectra change of carbon based 2D semiconductor C3N[J]. CHINESE CHEMICAL LETTERS,2021,33(5):2600-2604.
APA	Yang, Yucheng.,Wei, Wenya.,He, Peng.,Yang, Siwei.,Yuan, Qinghong.,...&Xie, Xiaoming.(2021).Stacking driven Raman spectra change of carbon based 2D semiconductor C3N.CHINESE CHEMICAL LETTERS,33(5),2600-2604.
MLA	Yang, Yucheng,et al."Stacking driven Raman spectra change of carbon based 2D semiconductor C3N".CHINESE CHEMICAL LETTERS 33.5(2021):2600-2604.