Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes

Temperature-dependent electrical characteristics were explicitly investigated for a 400-mu m diameter neutronirradiated (NI) GaN Schottky barrier diode (SBD). Based on C-V measurements, a marked decrease in electron concentration has been revealed for the NI diode compared with the pristine sample, suggesting a thermalenhanced carrier removal effect. Neutron irradiation causes noticeable Schottky barrier height inhomogeneity, which was studied by a two-barrier model. Data indicates that neutron irradiation affects a small but measurable suppression of leakage current as well as low frequency noise level. Despite a new deep-level trap was identified, the temperature-dependent electrical results specified GaN SBD's outstanding resistance to neutron irradiations and robustness in extreme operation temperatures.

收录类别

SCI ; EI ; SCIE

WOS记录号

WOS:000704765600010

引用统计

文献类型

期刊论文

条目标识符

https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/128187

专题

信息科学与技术学院_硕士生
信息科学与技术学院_博士生

共同第一作者

Ren Yuan

通讯作者

Zou Xinbo

作者单位

ShanghaiTech

第一作者单位

上海科技大学

第一作者的第一单位

上海科技大学

推荐引用方式
GB/T 7714

Zhu M,Ren Yuan,Zhou Leidang,et al. Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes[J]. MICROELECTRONICS RELIABILITY,2021,125.

APA

Zhu M.,Ren Yuan.,Zhou Leidang.,Chen Jiaxiang.,Guo Haowen.,...&Zou Xinbo.(2021).Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes.MICROELECTRONICS RELIABILITY,125.

MLA

Zhu M,et al."Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes".MICROELECTRONICS RELIABILITY 125(2021).