| Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes |
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| 2021-08
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| 发表期刊 | MICROELECTRONICS RELIABILITY
(IF:1.6[JCR-2023],1.6[5-Year]) |
| ISSN | 0026-2714
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| 卷号 | 125 |
| 发表状态 | 已发表
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| DOI | 10.1016/j.microrel.2021.114345
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| 摘要 |
| Temperature-dependent electrical characteristics were explicitly investigated for a 400-mu m diameter neutronirradiated (NI) GaN Schottky barrier diode (SBD). Based on C-V measurements, a marked decrease in electron concentration has been revealed for the NI diode compared with the pristine sample, suggesting a thermalenhanced carrier removal effect. Neutron irradiation causes noticeable Schottky barrier height inhomogeneity, which was studied by a two-barrier model. Data indicates that neutron irradiation affects a small but measurable suppression of leakage current as well as low frequency noise level. Despite a new deep-level trap was identified, the temperature-dependent electrical results specified GaN SBD's outstanding resistance to neutron irradiations and robustness in extreme operation temperatures. |
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| 收录类别 | SCI
; EI
; SCIE
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| WOS记录号 | WOS:000704765600010
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| 引用统计 | 正在获取...
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| 文献类型 | 期刊论文
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| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/128187
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| 专题 | 信息科学与技术学院_硕士生
信息科学与技术学院_博士生
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| 共同第一作者 | Ren Yuan |
| 通讯作者 | Zou Xinbo |
| 作者单位 | ShanghaiTech
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| 第一作者单位 | 上海科技大学
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| 第一作者的第一单位 | 上海科技大学
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推荐引用方式
GB/T 7714 |
Zhu M,Ren Yuan,Zhou Leidang,et al. Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes[J].
MICROELECTRONICS RELIABILITY,2021,125.
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| APA |
Zhu M.,Ren Yuan.,Zhou Leidang.,Chen Jiaxiang.,Guo Haowen.,...&Zou Xinbo.(2021).Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes.MICROELECTRONICS RELIABILITY,125.
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| MLA |
Zhu M,et al."Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes".MICROELECTRONICS RELIABILITY 125(2021).
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