High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity

doi:10.1007/s11082-021-02915-x

	High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity; High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity
	Han, Hao 1,2; Zhu, Yicheng 2,4; Guo, Zilu2,5 ; Li, Zhifeng 2; Qu, Huidan 2; Gao, Wantian 2; Wang, Ding 1; Wang, Wenjuan 2,3
	2021-06
发表期刊	OPTICAL AND QUANTUM ELECTRONICS ; OPTICAL AND QUANTUM ELECTRONICS
ISSN	0306-8919 ; 0306-8919
EISSN	1572-817X ; 1572-817X
卷号	53 期号:6
DOI	10.1007/s11082-021-02915-x ; 10.1007/s11082-021-02915-x
摘要	Reducing the dark current of InGaAs/InP avalanche photodiodes (APDs) is an important way to improve its performance. Decreasing the active size can reduce the dark current but sacrifice the quantum efficiency. In this paper, the metal-insulator-metal (MIM) microcavity is integrated with an APD, which can converge light from tens of micrometers to several micrometers, so as to compensate for the loss of detection efficiency caused by the reduction of the size of the APD. Through photoelectric joint simulation, the optical response of the device can be obtained, and the coupling effect between the MIM structure and the APD can be analyzed directly. The simulation results show that the photocurrent to the dark current ratio of the APD integrated with the MIM microcavity is twice of the MIM free traditional APD, and the 3 dB bandwidth reaches 5.8 GHz. When the MIM microcavity is applied to an APD array, the optical crosstalk between pixels is found to be negligible.; Reducing the dark current of InGaAs/InP avalanche photodiodes (APDs) is an important way to improve its performance. Decreasing the active size can reduce the dark current but sacrifice the quantum efficiency. In this paper, the metal-insulator-metal (MIM) microcavity is integrated with an APD, which can converge light from tens of micrometers to several micrometers, so as to compensate for the loss of detection efficiency caused by the reduction of the size of the APD. Through photoelectric joint simulation, the optical response of the device can be obtained, and the coupling effect between the MIM structure and the APD can be analyzed directly. The simulation results show that the photocurrent to the dark current ratio of the APD integrated with the MIM microcavity is twice of the MIM free traditional APD, and the 3 dB bandwidth reaches 5.8 GHz. When the MIM microcavity is applied to an APD array, the optical crosstalk between pixels is found to be negligible.
关键词	Avalanche photodiodes Avalanche photodiodes Photoelectric co-simulation Photoelectric co-simulation Metal-insulator-metal microcavity Metal-insulator-metal microcavity Crosstalk Crosstalk
URL	查看原文 ; 查看原文
收录类别	SCIE ; SCIE ; EI
语种	英语 ; 英语
WOS研究方向	Engineering ; Engineering ; Physics ; Physics ; Optics ; Optics
WOS类目	Engineering, Electrical & Electronic ; Engineering, Electrical & Electronic ; Quantum Science & Technology ; Quantum Science & Technology ; Optics ; Optics
WOS记录号	WOS:000691285100010 ; WOS:000691285100010
出版者	SPRINGER ; SPRINGER
原始文献类型	Article ; Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/128111
专题	物质科学与技术学院_博士生
通讯作者	Wang, Wenjuan
作者单位	1.Univ Shanghai Sci & Technol, 516 Jungong Rd, Shanghai 200093, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China; 3.Shanghai Res Ctr Quantum Sci, Shanghai 201315, Peoples R China; 4.Univ Chinese Acad Sci, 19 A Yu Quan Rd, Beijing 100049, Peoples R China; 5.Shanghai Tech Univ, 393 Huaxia Middle Rd, Pudong 201210, Peoples R China
推荐引用方式 GB/T 7714	Han, Hao,Zhu, Yicheng,Guo, Zilu,et al. High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity, High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity[J]. OPTICAL AND QUANTUM ELECTRONICS, OPTICAL AND QUANTUM ELECTRONICS,2021,53, 53(6).
APA	Han, Hao.,Zhu, Yicheng.,Guo, Zilu.,Li, Zhifeng.,Qu, Huidan.,...&Wang, Wenjuan.(2021).High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity.OPTICAL AND QUANTUM ELECTRONICS,53(6).
MLA	Han, Hao,et al."High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity".OPTICAL AND QUANTUM ELECTRONICS 53.6(2021).