Quasiadiabatic electron transport in room temperature nanoelectronic devices induced by hot-phonon bottleneck

doi:10.1038/s41467-021-25094-5

	Quasiadiabatic electron transport in room temperature nanoelectronic devices induced by hot-phonon bottleneck
	Weng, Qianchun 1,2,11; Yang, Le 3,4; An, Zhenghua 3,4,5; Chen, Pingping 1; Tzalenchu, Alexander 6,7; Lu, Wei1,8 ; Komiyama, Susumu 1,9,10
	2021
发表期刊	NATURE COMMUNICATIONS (IF:14.7[JCR-2023],16.1[5-Year])
ISSN	2041-1723
EISSN	2041-1723
卷号	12 期号:1
DOI	10.1038/s41467-021-25094-5
摘要	Since the invention of transistors, the flow of electrons has become controllable in solid-state electronics. The flow of energy, however, remains elusive, and energy is readily dissipated to lattice via electron-phonon interactions. Hence, minimizing the energy dissipation has long been sought by eliminating phonon-emission process. Here, we report a different scenario for facilitating energy transmission at room temperature that electrons exert diffusive but quasiadiabatic transport, free from substantial energy loss. Direct nanothermometric mapping of electrons and lattice in current-carrying GaAs/AlGaAs devices exhibit remarkable discrepancies, indicating unexpected thermal isolation between the two subsystems. This surprising effect arises from the overpopulated hot longitudinal-optical (LO) phonons generated through frequent emission by hot electrons, which induce equally frequent LO-phonon reabsorption (hot-phonon bottleneck) cancelling the net energy loss. Our work sheds light on energy manipulation in nanoelectronics and power-electronics and provides important hints to energy-harvesting in optoelectronics (such as hot-carrier solar-cells). Minimizing the energy dissipation is usually sought by eliminating phonon-emission process. Here, the authors find a different approach for facilitating energy transmission at room temperature that electrons exert diffusive but quasiadiabatic transport, free from substantial energy loss.
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收录类别	SCIE
语种	英语
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000684547900016
出版者	NATURE PORTFOLIO
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127996
专题	物质科学与技术学院_特聘教授组_陆卫组
通讯作者	Weng, Qianchun; An, Zhenghua; Lu, Wei
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai, Peoples R China; 2.Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo, Japan; 3.Fudan Univ, Inst Nanoelect Devices & Quantum Comp, State Key Lab Surface Phys, Shanghai, Peoples R China; 4.Fudan Univ, Dept Phys, Shanghai, Peoples R China; 5.Shanghai Qi Zhi Inst, Shanghai, Peoples R China; 6.Natl Phys Lab, Teddington, Middx, England; 7.Royal Holloway Univ London, Egham, Surrey, England; 8.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China; 9.Univ Tokyo, Dept Basic Sci, Meguro Ku, Tokyo, Japan; 10.Natl Inst Informat & Commun Technol, Terahertz Technol Res Ctr, Koganei, Tokyo, Japan; 11.RIKEN, Surface & Interface Sci Lab, Wako, Saitama, Japan
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Weng, Qianchun,Yang, Le,An, Zhenghua,et al. Quasiadiabatic electron transport in room temperature nanoelectronic devices induced by hot-phonon bottleneck[J]. NATURE COMMUNICATIONS,2021,12(1).
APA	Weng, Qianchun.,Yang, Le.,An, Zhenghua.,Chen, Pingping.,Tzalenchu, Alexander.,...&Komiyama, Susumu.(2021).Quasiadiabatic electron transport in room temperature nanoelectronic devices induced by hot-phonon bottleneck.NATURE COMMUNICATIONS,12(1).
MLA	Weng, Qianchun,et al."Quasiadiabatic electron transport in room temperature nanoelectronic devices induced by hot-phonon bottleneck".NATURE COMMUNICATIONS 12.1(2021).