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Vertical Josephson field-effect transistors based on black phosphorus | |
Xu, Zuyu1,2,3; Chen, Wei1,2; Huang, Junwei4,5; Tian, Wanghao1,2; Chen, Shixian1,2; Yue, Wencheng1,2; Chi, Tianyuan1,2; Lyu, Yang-Yang1,2; Sun, Hancong3; Wang, Yong-Lei1,2; Sun, Guozhu1,2; Chen, Jian1,2; Jin, Biaobing1,2; Li, Song-Lin1,2; Yuan, Hongtao4,5; Li, Jun6,7 ![]() | |
2021-08-16 | |
发表期刊 | APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year]) |
ISSN | 0003-6951 |
EISSN | 1077-3118 |
卷号 | 119期号:7 |
发表状态 | 已发表 |
DOI | 10.1063/5.0061999 |
摘要 | The gate-tunable Josephson junction, generally achieved in planar Josephson field-effect transistors (JoFETs), is a key element for the applications of superconducting devices. At present, the performance of these systems with planar JoFETs is often impeded by the large channel length, which, at best, lies in the range of tens of nanometers. In contrast, the channel length in vertical junctions can be easily scaled down to nano-scale to realize the strong Josephson coupling. However, the vertical junctions are believed to be insensitive to the field-effect due to the atomic screening of electric fields in metals. Here, we report on a novel realization of few-layer black phosphorus (BP)-based vertical JoFETs using an electric-double-layer configuration. In transport experiments, using junctions of different shape, superconducting quantum interference device-like magnetic diffraction patterns of the junction critical current and anomalous Shapiro steps on current voltage characteristics are observed, strongly indicating that the critical current density in the junctions is highly inhomogeneous and peaked at the edges or even near the junction corners. The electric-field tunability of the Josephson coupling could be attributed to the edge- or corner-dominated supercurrent density profile combining with the carrier diffusivity in the few-layer BP. The ability to control the vertical Josephson coupling provides us with new opportunities to study high-performance and high-temperature superconducting Josephson field-effect transistors operating on an atomic-scale channel length. |
收录类别 | SCIE ; EI |
语种 | 英语 |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
WOS记录号 | WOS:000685871700008 |
出版者 | AMER INST PHYSICS |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127983 |
专题 | 物质科学与技术学院_PI研究组_李军组 |
通讯作者 | Li, Jun; Koelle, Dieter; Kleiner, Reinhold; Wang, Huabing |
作者单位 | 1.Nanjing Univ, Res Inst Superconductor Elect, Nanjing 210023, Peoples R China; 2.Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Peoples R China; 3.Purple Mt Labs, Nanjing 211111, Peoples R China; 4.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210023, Peoples R China; 5.Nanjing Univ, Coll Engn & Appl Sci, Nanjing 210023, Peoples R China; 6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China; 7.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 200031, Peoples R China; 8.Univ Tubingen, Phys Inst, Ctr Quantum Sci, D-72076 Tubingen, Germany; 9.Univ Tubingen, LISA, D-72076 Tubingen, Germany |
通讯作者单位 | 物质科学与技术学院; 上海科技大学 |
推荐引用方式 GB/T 7714 | Xu, Zuyu,Chen, Wei,Huang, Junwei,et al. Vertical Josephson field-effect transistors based on black phosphorus[J]. APPLIED PHYSICS LETTERS,2021,119(7). |
APA | Xu, Zuyu.,Chen, Wei.,Huang, Junwei.,Tian, Wanghao.,Chen, Shixian.,...&Wu, Peiheng.(2021).Vertical Josephson field-effect transistors based on black phosphorus.APPLIED PHYSICS LETTERS,119(7). |
MLA | Xu, Zuyu,et al."Vertical Josephson field-effect transistors based on black phosphorus".APPLIED PHYSICS LETTERS 119.7(2021). |
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