Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
2021-05-25
发表期刊ACS NANO (IF:15.8[JCR-2023],16.2[5-Year])
ISSN1936-0851
EISSN1936-086X
卷号15期号:5页码:9126-9133
发表状态已发表
DOI10.1021/acsnano.1c02425
摘要

We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by an excellent NW morphology and InGaAs/GaAs multiquantum disks. At 5 K, a threshold low as 1.6 mu J/cm(2) per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface nonradiative recombination, single-mode lasing operation is obtained with a threshold of only 48 mu J/cm(2) per pulse at room temperature with a high characteristic temperature of 223 K and power output of X0.9 mu W. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.

关键词nanowire laser single-mode quantum disks low threshold near-infrared
收录类别SCIE ; EI
语种英语
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000656994100107
出版者AMER CHEMICAL SOC
原始文献类型Article
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127534
专题物质科学与技术学院_特聘教授组_陆卫组
通讯作者Gan, Xuetao; Chen, Pingping; Lu, Wei
作者单位
1.Northwestern Polytech Univ, Sch Phys Sci & Technol, Minist Ind & Informat Technol, Key Lab Light Field Manipulat & Informat Acquisit, Xian 710129, Shaanxi, Peoples R China;
2.Northwestern Polytech Univ, Sch Phys Sci & Technol, Shaanxi Key Lab Opt Informat Technol, Xian 710129, Shaanxi, Peoples R China;
3.Australian Natl Univ, Res Sch Phys, Dept Elect Mat Engn, Canberra, ACT 2601, Australia;
4.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China;
5.Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
6.Cent South Univ, Sch Phys & Elect, Hunan Key Lab Nanophoton & Devices, Changsha 410083, Hunan, Peoples R China;
7.Australian Natl Univ, Res Sch Phys, ARC Ctr Excellence Transformat Meta Opt Syst, Canberra, ACT 2601, Australia;
8.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
通讯作者单位物质科学与技术学院
推荐引用方式
GB/T 7714
Zhang, Xutao,Yi, Ruixuan,Gagrani, Nikita,et al. Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers[J]. ACS NANO,2021,15(5):9126-9133.
APA Zhang, Xutao.,Yi, Ruixuan.,Gagrani, Nikita.,Li, Ziyuan.,Zhang, Fanlu.,...&Jagadish, Chennupati.(2021).Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers.ACS NANO,15(5),9126-9133.
MLA Zhang, Xutao,et al."Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers".ACS NANO 15.5(2021):9126-9133.
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