一种真空压弯式弯晶
翻译题名Vacuum bending type bent crystal
申请号CN202010825515.0
2020-08-17
公开(公告)号CN112201383A
公开日期2021-01-08
摘要

本发明公开了一种真空压弯式弯晶,其特征在于:包括壳体,所述壳体上设有X射线入射口,从X射线入射口到壳体内部沿X射线入射方向依次设置X射线透射膜、单晶晶片和曲面基底,所述X射线透射膜、壳体的侧壁和底面形成密封腔体,所述密封腔体上设有用于抽真空的排气口,进行晶体压弯时,密封腔体内产生负压,大气压将X射线透射膜柔性地贴合在单晶晶片和曲面基底上。本发明采用真空压弯的方式,各种单晶晶片均可进行压弯,极大地扩展了弯晶的材料选择;利用大气压对单晶晶片和曲面基底柔性地施加应力,受力均匀,结构稳定;可以直接将单晶晶片和曲面基底贴合,复制曲面基底的面形,保持较高的面形精度;同一块单晶晶片可以搭配不同面形的曲面基底,降低制造成本。

翻译摘要

The invention discloses a vacuum bending type bent crystal, which is characterized by comprising a shell, wherein an X-ray incident port is formed in the shell, an X-ray transmission film, a single crystal wafer and a curved surface substrate are sequentially arranged from the X-ray incident port to the interior of the shell in the X-ray incident direction, the X-ray transmission film, the side wall of the shell and the bottom surface of the shell form a sealed cavity, the sealed cavity is provided with an exhaust port used for vacuumizing, negative pressure is generated in the sealed cavity when crystal bending is carried out, and the X-ray transmission film is flexibly attached to the single crystal wafer and the curved surface substrate through atmospheric pressure. According to the invention, by adopting a vacuum bending mode, various single crystal wafers can be bent, so that the material selection of crystal bending is greatly expanded; stress is flexibly applied to the single crystal wafer and the curved surface substrate by utilizing atmospheric pressure, the stress is uniform, and the structure is stable; a single crystal wafer can be directly attached to the curved surface substrate, the surface shape of the curved surface substrate is copied, and high surface shape precision is kept; and the same single crystal wafer can be matched with curved-surface substrates withdifferent surface shapes, so that the manufacturing cost is reduced.

当前权利人上海科技大学
专利代理人徐俊
代理机构上海申汇专利代理有限公司 31001
专利申请人上海科技大学
公开国别CN
公开国别简称CN
IPC 分类号G21K1//06
CPC分类号G21K1//062
专利有效性失效
专利类型发明申请
专利类型字典1
当前法律状态驳回
简单同族CN112201383A
扩展同族CN112201383A
INPADOC 同族CN112201383A
文献类型专利
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127101
专题硬x射线自由电子激光装置项目
物质科学与技术学院
大科学中心_PI研究组_翁祖谦组
大科学中心_公共科研平台_大科学装置建设部
作者单位
上海科技大学
推荐引用方式
GB/T 7714
翁祖谦,刘星,刘鹏. 一种真空压弯式弯晶. CN202010825515.0[P]. 2020-08-17.
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