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Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene | |
Shen, Cheng1,2,3; Ying, Jianghua1,2,3; Liu, Le1,2,3; Liu, Jianpeng4,5; Li, Na1,2,3,7; Wang, Shuopei1,2,3,7; Tang, Jian1,2,3; Zhao, Yanchong1,2,3; Chu, Yanbang1,2,3; Watanabe, Kenji8; Taniguchi, Takashi9; Yang, Rong1,2,6,7; Shi, Dongxia1,2,3,6; Qu, Fanming1,2,3,7; Lu, Li1,2,3,7; Yang, Wei1,2,3,7; Zhang, Guangyu1,2,3,6,7
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2021-05 | |
发表期刊 | CHINESE PHYSICS LETTERS |
ISSN | 0256-307X |
EISSN | 1741-3540 |
卷号 | 38期号:4 |
发表状态 | 已发表 |
DOI | 10.1088/0256-307X/38/4/047301 |
摘要 | Twisting two layers into a magic angle (MA) of similar to 1.1 degrees is found essential to create low energy flat bands and the resulting correlated insulating, superconducting, and magnetic phases in twisted bilayer graphene (TBG). While most of previous works focus on revealing these emergent states in MA-TBG, a study of the twist angle dependence, which helps to map an evolution of these phases, is yet less explored. Here, we report a magneto-transport study on one non-magic angle TBG device, whose twist angle theta changes from 1.25 degrees at one end to 1.43 degrees at the other. For theta = 1.25 degrees we observe an emergence of topological insulating states at hole side with a sequence of Chern number | C | = 4 - | v |, where v is the number of electrons (holes) in moire unite cell. When theta > 1.25 degrees, the Chern insulator from flat band disappears and evolves into fractal Hofstadter butterfly quantum Hall insulator where magnetic flux in one moire unite cell matters. Our observations will stimulate further theoretical and experimental investigations on the relationship between electron interactions and non-trivial band topology. |
URL | 查看原文 |
收录类别 | SCIE ; EI |
语种 | 英语 |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
WOS记录号 | WOS:000655281600001 |
出版者 | IOP PUBLISHING LTD |
原始文献类型 | Article |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127001 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_刘健鹏组 |
通讯作者 | Yang, Wei; Zhang, Guangyu |
作者单位 | 1.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China; 2.Chinese Acad Sci, Key Lab Nanoscale Phys & Devices, Inst Phys, Beijing 100190, Peoples R China; 3.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China; 4.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China; 5.Shanghai Tech Univ, ShanghaiTech Lab Topol Phys, Shanghai 200031, Peoples R China; 6.Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China; 7.Songshan Lake Mat Lab, Dongguan 523808, Peoples R China; 8.Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan; 9.Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan |
推荐引用方式 GB/T 7714 | Shen, Cheng,Ying, Jianghua,Liu, Le,et al. Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene[J]. CHINESE PHYSICS LETTERS,2021,38(4). |
APA | Shen, Cheng.,Ying, Jianghua.,Liu, Le.,Liu, Jianpeng.,Li, Na.,...&Zhang, Guangyu.(2021).Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene.CHINESE PHYSICS LETTERS,38(4). |
MLA | Shen, Cheng,et al."Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene".CHINESE PHYSICS LETTERS 38.4(2021). |
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