Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene
2021-05
发表期刊CHINESE PHYSICS LETTERS
ISSN0256-307X
EISSN1741-3540
卷号38期号:4
发表状态已发表
DOI10.1088/0256-307X/38/4/047301
摘要

Twisting two layers into a magic angle (MA) of similar to 1.1 degrees is found essential to create low energy flat bands and the resulting correlated insulating, superconducting, and magnetic phases in twisted bilayer graphene (TBG). While most of previous works focus on revealing these emergent states in MA-TBG, a study of the twist angle dependence, which helps to map an evolution of these phases, is yet less explored. Here, we report a magneto-transport study on one non-magic angle TBG device, whose twist angle theta changes from 1.25 degrees at one end to 1.43 degrees at the other. For theta = 1.25 degrees we observe an emergence of topological insulating states at hole side with a sequence of Chern number | C | = 4 - | v |, where v is the number of electrons (holes) in moire unite cell. When theta > 1.25 degrees, the Chern insulator from flat band disappears and evolves into fractal Hofstadter butterfly quantum Hall insulator where magnetic flux in one moire unite cell matters. Our observations will stimulate further theoretical and experimental investigations on the relationship between electron interactions and non-trivial band topology.

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收录类别SCIE ; EI
语种英语
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000655281600001
出版者IOP PUBLISHING LTD
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127001
专题物质科学与技术学院
物质科学与技术学院_PI研究组_刘健鹏组
通讯作者Yang, Wei; Zhang, Guangyu
作者单位
1.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;
2.Chinese Acad Sci, Key Lab Nanoscale Phys & Devices, Inst Phys, Beijing 100190, Peoples R China;
3.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China;
4.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China;
5.Shanghai Tech Univ, ShanghaiTech Lab Topol Phys, Shanghai 200031, Peoples R China;
6.Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China;
7.Songshan Lake Mat Lab, Dongguan 523808, Peoples R China;
8.Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan;
9.Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
推荐引用方式
GB/T 7714
Shen, Cheng,Ying, Jianghua,Liu, Le,et al. Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene[J]. CHINESE PHYSICS LETTERS,2021,38(4).
APA Shen, Cheng.,Ying, Jianghua.,Liu, Le.,Liu, Jianpeng.,Li, Na.,...&Zhang, Guangyu.(2021).Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene.CHINESE PHYSICS LETTERS,38(4).
MLA Shen, Cheng,et al."Emergence of Chern Insulating States in Non-Magic Angle Twisted Bilayer Graphene".CHINESE PHYSICS LETTERS 38.4(2021).
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