消息
×
loading..
Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions
2021-05-14
发表期刊ACS ENERGY LETTERS (IF:19.3[JCR-2023],20.8[5-Year])
ISSN2380-8195
卷号6期号:5页码:1740-1748
发表状态已发表
DOI10.1021/acsenergylett.0c02660
摘要

The efficiency of antimony selenide (Sb2Se3) solar cells has been improved from <2% to >10% within only 7 years, but fundamental properties at the heterojunction interface such as the charge carrier transfer and the trap state localizing process has not been studied yet. Here, the carrier competing dynamics in Sb2Se3-based heterojunction has been systematically investigated. We find the competition between the band-edge electron transfer and the trapping process in CdS/Sb2Se3 will result in less-efficient charge separation and hence low open circuit voltage in photovoltaic devices. In contrast, the hot electron extraction at the SnO2/Sb2Se3 interface is nearly an order of magnitude faster than the trapping process, which can effectively escape the trapping carrier loss and potentially lead to higher open-circuit voltages. Our results reveal the hidden role of the buffer interface in the ultrafast charge extraction and provide a potential strategy to improve the performance of Sb2Se3-based solar cells.

收录类别SCIE ; EI
语种英语
WOS研究方向Chemistry ; Electrochemistry ; Energy & Fuels ; Science & Technology - Other Topics ; Materials Science
WOS类目Chemistry, Physical ; Electrochemistry ; Energy & Fuels ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000651810400010
出版者AMER CHEMICAL SOC
原始文献类型Article
引用统计
正在获取...
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126999
专题物质科学与技术学院_博士生
物质科学与技术学院_特聘教授组_冷雨欣组
通讯作者Du, Juan; Chen, Chao; Leng, Yuxin
作者单位
1.Chinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China;
2.Chinese Acad Sci, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China;
3.Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China;
4.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Hangzhou 310024, Peoples R China;
5.Huazhong Univ Sci & Technol HUST, Wuhan Natl Lab Optoelect WNLO, Wuhan 430074, Peoples R China;
6.Huazhong Univ Sci & Technol HUST, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China;
7.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
通讯作者单位物质科学与技术学院
推荐引用方式
GB/T 7714
Zhang, Zeyu,Hu, Manchen,Jia, Tingyuan,et al. Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions[J]. ACS ENERGY LETTERS,2021,6(5):1740-1748.
APA Zhang, Zeyu.,Hu, Manchen.,Jia, Tingyuan.,Du, Juan.,Chen, Chao.,...&Leng, Yuxin.(2021).Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions.ACS ENERGY LETTERS,6(5),1740-1748.
MLA Zhang, Zeyu,et al."Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions".ACS ENERGY LETTERS 6.5(2021):1740-1748.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
个性服务
查看访问统计
谷歌学术
谷歌学术中相似的文章
[Zhang, Zeyu]的文章
[Hu, Manchen]的文章
[Jia, Tingyuan]的文章
百度学术
百度学术中相似的文章
[Zhang, Zeyu]的文章
[Hu, Manchen]的文章
[Jia, Tingyuan]的文章
必应学术
必应学术中相似的文章
[Zhang, Zeyu]的文章
[Hu, Manchen]的文章
[Jia, Tingyuan]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。