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ShanghaiTech University Knowledge Management System
Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions | |
2021-05-14 | |
发表期刊 | ACS ENERGY LETTERS (IF:19.3[JCR-2023],20.8[5-Year]) |
ISSN | 2380-8195 |
卷号 | 6期号:5页码:1740-1748 |
发表状态 | 已发表 |
DOI | 10.1021/acsenergylett.0c02660 |
摘要 | The efficiency of antimony selenide (Sb2Se3) solar cells has been improved from <2% to >10% within only 7 years, but fundamental properties at the heterojunction interface such as the charge carrier transfer and the trap state localizing process has not been studied yet. Here, the carrier competing dynamics in Sb2Se3-based heterojunction has been systematically investigated. We find the competition between the band-edge electron transfer and the trapping process in CdS/Sb2Se3 will result in less-efficient charge separation and hence low open circuit voltage in photovoltaic devices. In contrast, the hot electron extraction at the SnO2/Sb2Se3 interface is nearly an order of magnitude faster than the trapping process, which can effectively escape the trapping carrier loss and potentially lead to higher open-circuit voltages. Our results reveal the hidden role of the buffer interface in the ultrafast charge extraction and provide a potential strategy to improve the performance of Sb2Se3-based solar cells. |
收录类别 | SCIE ; EI |
语种 | 英语 |
WOS研究方向 | Chemistry ; Electrochemistry ; Energy & Fuels ; Science & Technology - Other Topics ; Materials Science |
WOS类目 | Chemistry, Physical ; Electrochemistry ; Energy & Fuels ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS记录号 | WOS:000651810400010 |
出版者 | AMER CHEMICAL SOC |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126999 |
专题 | 物质科学与技术学院_博士生 物质科学与技术学院_特聘教授组_冷雨欣组 |
通讯作者 | Du, Juan; Chen, Chao; Leng, Yuxin |
作者单位 | 1.Chinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China; 2.Chinese Acad Sci, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China; 3.Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China; 4.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Hangzhou 310024, Peoples R China; 5.Huazhong Univ Sci & Technol HUST, Wuhan Natl Lab Optoelect WNLO, Wuhan 430074, Peoples R China; 6.Huazhong Univ Sci & Technol HUST, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China; 7.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China |
通讯作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Zhang, Zeyu,Hu, Manchen,Jia, Tingyuan,et al. Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions[J]. ACS ENERGY LETTERS,2021,6(5):1740-1748. |
APA | Zhang, Zeyu.,Hu, Manchen.,Jia, Tingyuan.,Du, Juan.,Chen, Chao.,...&Leng, Yuxin.(2021).Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions.ACS ENERGY LETTERS,6(5),1740-1748. |
MLA | Zhang, Zeyu,et al."Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions".ACS ENERGY LETTERS 6.5(2021):1740-1748. |
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