Efficient Carrier Recombination in InGaN Pyramidal mu-LEDs Obtained through Selective Area Growth
Jiang, Jie'an1,2,3; Xu, Houqiang2,3; Chen, Li2,3; Yan, Long4; Hoo, Jason4; Guo, Shiping4; Zeng, Yuheng2,3; Guo, Wei2,3; Ye, Jichun2,3
2021
Source PublicationPHOTONICS
EISSN2304-6732
Volume8Issue:5
DOI10.3390/photonics8050157
AbstractPyramid-shaped InGaN/GaN micro-light-emitting diodes (mu-LEDs) were grown on a sapphire substrate using the selective area growth technique. A stable emission wavelength of a single mu-LED pyramid at 412 nm was observed under an injection current from 0.05 to 20 mA, despite the non-uniformity of the thickness and composition of the multiple quantum wells (MQWs) on the sidewall. An efficient carrier confinement and, thus, a high luminescence intensity were demonstrated in the middle of the sidewall through spatial-resolved cathodoluminescence (CL) characterization and were predicted by theoretical simulations. An ultra-high output power density of 1.37 kW/cm(2) was obtained from the single mu-LED pyramid, illustrating its great potential for application in high-brightness micro-displays and in virtual reality and augmented reality (VR and AR) applications.
Keywordmicro-LED selective area growth luminescence property output power density carrier confinement
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Indexed BySCIE
Language英语
WOS Research AreaOptics
WOS SubjectOptics
WOS IDWOS:000654396200001
PublisherMDPI
Original Document TypeArticle
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Cited Times [WOS]:0   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126802
Collection物质科学与技术学院_博士生
生命科学与技术学院_博士生
Affiliation1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China;
2.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China;
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
4.Adv Microfabricat Equipment Inc, Shanghai 201201, Peoples R China
First Author AffilicationSchool of Physical Science and Technology
First Signature AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Jiang, Jie'an,Xu, Houqiang,Chen, Li,et al. Efficient Carrier Recombination in InGaN Pyramidal mu-LEDs Obtained through Selective Area Growth[J]. PHOTONICS,2021,8(5).
APA Jiang, Jie'an.,Xu, Houqiang.,Chen, Li.,Yan, Long.,Hoo, Jason.,...&Ye, Jichun.(2021).Efficient Carrier Recombination in InGaN Pyramidal mu-LEDs Obtained through Selective Area Growth.PHOTONICS,8(5).
MLA Jiang, Jie'an,et al."Efficient Carrier Recombination in InGaN Pyramidal mu-LEDs Obtained through Selective Area Growth".PHOTONICS 8.5(2021).
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