Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films
2021-09-05
发表期刊JOURNAL OF ALLOYS AND COMPOUNDS (IF:5.8[JCR-2023],5.3[5-Year])
ISSN0925-8388
EISSN1873-4669
卷号874
发表状态已发表
DOI10.1016/j.jallcom.2021.159867
摘要

II-VI ternary alloy is a promising material for advanced optoelectronic devices like ultraviolet (UV) photodetectors, light emitting diodes and laser diodes with high efficiency and low fabrication cost. The precise control over the doping element, concentration and crystal quality allows careful tuning of their band structures for novel optoelectronic properties. In this work, we report a prominent two-mode behavior in ternary BexZn1-xO alloy using resonant Raman spectroscopy as a probe. By combining with the excitonic localization and extrinsic Frohlich interaction, we present a theoretical analysis on the resonant Raman scattering with different Be concentrations and tunable measured temperatures. Frequency blue shifts caused by compressed stress and two-mode phonons (ZnO-like and BeO-like A(1)(LO) phonons) scattering up to third orders revealed in this novel ternary alloy. In addition, alloying induced disorder and electronic states in the forbidden band result in the broadening of line width and the enhancement of LO-phonon oscillator strength. As a result, a high performance BeZnO based photoconductive type UV photodetector was realized, indicating the potential of BeZnO as a promising material for optoelectronic devices. (C) 2021 Elsevier B.V. All rights reserved.

关键词BexZn1-xO Resonant Raman spectra Localized exciton Two-mode behavior UV photodetector Alloying Blue shift II VI semiconductors Photodetectors Photons Quality control Raman scattering Semiconductor doping Ternary alloys Zinc oxide Bexzn1−xO Excitonic state VI ternary alloy Localised Optoelectronics devices Resonant raman spectrum Thin films Two mode behavior Ultra violet photodetectors
收录类别SCIE ; EI
语种英语
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号WOS:000653090800006
出版者ELSEVIER SCIENCE SA
EI入藏号20212310455811
EI主题词Phonons
EI分类号531.1 Metallurgy ; 712.1 Semiconducting Materials ; 741.1 Light/Optics ; 804.2 Inorganic Compounds ; 913.3 Quality Assurance and Control ; 931.3 Atomic and Molecular Physics
原始文献类型Article
引用统计
正在获取...
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126784
专题物质科学与技术学院_PI研究组_谢琎组
物质科学与技术学院_硕士生
物质科学与技术学院_博士生
通讯作者Su, Longxing; Zhu, Yuan; Xie, Jin; Tang, Zikang
作者单位
1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China;
2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Guangdong, Peoples R China;
3.Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa 519000, Macao, Peoples R China
第一作者单位物质科学与技术学院
通讯作者单位物质科学与技术学院
第一作者的第一单位物质科学与技术学院
推荐引用方式
GB/T 7714
Su, Longxing,Zhu, Yuan,An, Yuanyuan,et al. Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,874.
APA Su, Longxing,Zhu, Yuan,An, Yuanyuan,Xie, Jin,&Tang, Zikang.(2021).Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films.JOURNAL OF ALLOYS AND COMPOUNDS,874.
MLA Su, Longxing,et al."Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films".JOURNAL OF ALLOYS AND COMPOUNDS 874(2021).
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
个性服务
查看访问统计
谷歌学术
谷歌学术中相似的文章
[Su, Longxing]的文章
[Zhu, Yuan]的文章
[An, Yuanyuan]的文章
百度学术
百度学术中相似的文章
[Su, Longxing]的文章
[Zhu, Yuan]的文章
[An, Yuanyuan]的文章
必应学术
必应学术中相似的文章
[Su, Longxing]的文章
[Zhu, Yuan]的文章
[An, Yuanyuan]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。