ShanghaiTech University Knowledge Management System
Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films | |
2021-09-05 | |
发表期刊 | JOURNAL OF ALLOYS AND COMPOUNDS (IF:5.8[JCR-2023],5.3[5-Year]) |
ISSN | 0925-8388 |
EISSN | 1873-4669 |
卷号 | 874 |
发表状态 | 已发表 |
DOI | 10.1016/j.jallcom.2021.159867 |
摘要 | II-VI ternary alloy is a promising material for advanced optoelectronic devices like ultraviolet (UV) photodetectors, light emitting diodes and laser diodes with high efficiency and low fabrication cost. The precise control over the doping element, concentration and crystal quality allows careful tuning of their band structures for novel optoelectronic properties. In this work, we report a prominent two-mode behavior in ternary BexZn1-xO alloy using resonant Raman spectroscopy as a probe. By combining with the excitonic localization and extrinsic Frohlich interaction, we present a theoretical analysis on the resonant Raman scattering with different Be concentrations and tunable measured temperatures. Frequency blue shifts caused by compressed stress and two-mode phonons (ZnO-like and BeO-like A(1)(LO) phonons) scattering up to third orders revealed in this novel ternary alloy. In addition, alloying induced disorder and electronic states in the forbidden band result in the broadening of line width and the enhancement of LO-phonon oscillator strength. As a result, a high performance BeZnO based photoconductive type UV photodetector was realized, indicating the potential of BeZnO as a promising material for optoelectronic devices. (C) 2021 Elsevier B.V. All rights reserved. |
关键词 | BexZn1-xO Resonant Raman spectra Localized exciton Two-mode behavior UV photodetector Alloying Blue shift II VI semiconductors Photodetectors Photons Quality control Raman scattering Semiconductor doping Ternary alloys Zinc oxide Bexzn1−xO Excitonic state VI ternary alloy Localised Optoelectronics devices Resonant raman spectrum Thin films Two mode behavior Ultra violet photodetectors |
收录类别 | SCIE ; EI |
语种 | 英语 |
WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
WOS记录号 | WOS:000653090800006 |
出版者 | ELSEVIER SCIENCE SA |
EI入藏号 | 20212310455811 |
EI主题词 | Phonons |
EI分类号 | 531.1 Metallurgy ; 712.1 Semiconducting Materials ; 741.1 Light/Optics ; 804.2 Inorganic Compounds ; 913.3 Quality Assurance and Control ; 931.3 Atomic and Molecular Physics |
原始文献类型 | Article |
引用统计 | 正在获取...
|
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126784 |
专题 | 物质科学与技术学院_PI研究组_谢琎组 物质科学与技术学院_硕士生 物质科学与技术学院_博士生 |
通讯作者 | Su, Longxing; Zhu, Yuan; Xie, Jin; Tang, Zikang |
作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China; 2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Guangdong, Peoples R China; 3.Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa 519000, Macao, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Su, Longxing,Zhu, Yuan,An, Yuanyuan,et al. Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,874. |
APA | Su, Longxing,Zhu, Yuan,An, Yuanyuan,Xie, Jin,&Tang, Zikang.(2021).Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films.JOURNAL OF ALLOYS AND COMPOUNDS,874. |
MLA | Su, Longxing,et al."Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films".JOURNAL OF ALLOYS AND COMPOUNDS 874(2021). |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 |
修改评论
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。