Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate

doi:10.1109/LED.2021.3066171

	Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate
	Qiang Liu 1; Zhiqiang Mu 1; Chenhe Liu 1; Lantian Zhao 1; Lingli Chen 1; Yumeng Yang2 ; Xing Wei 1; Wenjie Yu 1
	2021-05
发表期刊	IEEE ELECTRON DEVICE LETTERS (IF:4.1[JCR-2023],4.2[5-Year])
ISSN	0741-3106
EISSN	1558-0563
卷号	42 期号:5 页码:657-660
发表状态	已发表
DOI	10.1109/LED.2021.3066171
摘要	A novel method for manufacturing gate-all-around metal-oxide-semiconductor field effect transistor (GAA MOSFET) based on void embedded silicon on insulator (VESOI) substrate is demonstrated in this work. VESOI with embedded submicron void chambers has been designed to fabricate suspended silicon channels by a one-step lithography and dry etching process. GAA MOSFET built on VESOI substrate exhibits excellent characteristics with subthreshold swing (SS) about 63mV/dec, ON/OFF ratio of 10(10), drain-induced barrier lowering (DIBL) less than 12mV/V and strong tolerance to back gate bias. This method shows significant advantages to fabricate suspended Si channels, and can be readily extended to other types of material systems for low-power and high-performance applications.
关键词	Logic gates Gallium arsenide Silicon Substrates Silicon-on-insulator Etching MOSFET Gate-all-around void embedded silicon on insulator suspended Si channels subthreshold swing
URL	查看原文
收录类别	SCIE ; EI
语种	英语
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000645061400004
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
原始文献类型	Article
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126670
专题	信息科学与技术学院信息科学与技术学院_PI研究组_杨雨梦组
作者单位	1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 2.School of Information Science and Technology, ShanghaiTech University, Shanghai, China
推荐引用方式 GB/T 7714	Qiang Liu,Zhiqiang Mu,Chenhe Liu,et al. Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate[J]. IEEE ELECTRON DEVICE LETTERS,2021,42(5):657-660.
APA	Qiang Liu.,Zhiqiang Mu.,Chenhe Liu.,Lantian Zhao.,Lingli Chen.,...&Wenjie Yu.(2021).Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate.IEEE ELECTRON DEVICE LETTERS,42(5),657-660.
MLA	Qiang Liu,et al."Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate".IEEE ELECTRON DEVICE LETTERS 42.5(2021):657-660.