Efficient carrier recombination in InGaN pyramidal µ-LED obtained by selective area growth

doi:10.3390/photonics8050157

	Efficient carrier recombination in InGaN pyramidal µ-LED obtained by selective area growth
	Jie'an Jiang1,2 ; Houqiang Xu 2; Li Chen 2; Long Yan 3; Jason Hoo 3; Shiping Guo 3; Yuheng Zeng 2; Wei Guo 2; Jichun Ye 2
	2021-05
发表期刊	PHOTONICS (IF:2.1[JCR-2023],2.1[5-Year])
ISSN	2304-6732
EISSN	2304-6732
卷号	8 期号:5
发表状态	已发表
DOI	10.3390/photonics8050157
摘要	Pyramid-shaped InGaN/GaN micro-light-emitting diodes (mu-LEDs) were grown on a sapphire substrate using the selective area growth technique. A stable emission wavelength of a single mu-LED pyramid at 412 nm was observed under an injection current from 0.05 to 20 mA, despite the non-uniformity of the thickness and composition of the multiple quantum wells (MQWs) on the sidewall. An efficient carrier confinement and, thus, a high luminescence intensity were demonstrated in the middle of the sidewall through spatial-resolved cathodoluminescence (CL) characterization and were predicted by theoretical simulations. An ultra-high output power density of 1.37 kW/cm(2) was obtained from the single mu-LED pyramid, illustrating its great potential for application in high-brightness micro-displays and in virtual reality and augmented reality (VR and AR) applications.
关键词	micro-LED selective area growth luminescence property output power density carrier confinement
学科门类	工学::材料科学与工程（可授工学、理学学位）
URL	查看原文
收录类别	SCI ; SCIE
语种	英语
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000654396200001
出版者	MDPI
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126487
专题	物质科学与技术学院_博士生
通讯作者	Wei Guo; Jichun Ye
作者单位	1.School of Physical Science and Technology, ShanghaiTech University, Pudong, Shanghai, 201210, China 2.Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, P. R. China 3.Advanced Micro-Fabrication Equipment Inc. Shanghai, 201201, China
第一作者单位	物质科学与技术学院
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Jie'an Jiang,Houqiang Xu,Li Chen,et al. Efficient carrier recombination in InGaN pyramidal µ-LED obtained by selective area growth[J]. PHOTONICS,2021,8(5).
APA	Jie'an Jiang.,Houqiang Xu.,Li Chen.,Long Yan.,Jason Hoo.,...&Jichun Ye.(2021).Efficient carrier recombination in InGaN pyramidal µ-LED obtained by selective area growth.PHOTONICS,8(5).
MLA	Jie'an Jiang,et al."Efficient carrier recombination in InGaN pyramidal µ-LED obtained by selective area growth".PHOTONICS 8.5(2021).