Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

doi:10.1002/pssr.202100035

	Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging
	Cui, Mei 1,2; Guo, Wei 1,2; Xu, Houqiang 1,2; Jiang, Jie'an1,2,3 ; Chen, Li 1,2; Mitra, Somak 4; Roqan, Iman S.4; Jiang, Haibo 5; Li, Xiaohang 6; Ye, Jichun 1,2
	2021-06
发表期刊	PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (IF:2.5[JCR-2023],2.5[5-Year])
ISSN	1862-6254
EISSN	1862-6270
卷号	15 期号:6
发表状态	已发表
DOI	10.1002/pssr.202100035
摘要	AlGaN-based multiple quantum wells (MQWs) incorporating opposite polarity domains are grown by metal-organic chemical vapor deposition (MOCVD). A direct demonstration of the carrier localization effect is provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer-scale polarity domains in the MQWs is promising for the development of efficient UV emitters.
关键词	carrier localization nanoscale imaging polarity control UV emitters
收录类别	SCI ; SCIE ; EI
语种	英语
WOS研究方向	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS类目	Materials Science ; Physics
WOS记录号	WOS:000628742800001
出版者	WILEY-V C H VERLAG GMBH
原始文献类型	Article; Early Access
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126092
专题	物质科学与技术学院_博士生
通讯作者	Guo, Wei; Ye, Jichun
作者单位	1.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China; 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China; 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China; 4.King Abdullah Univ Sci & Technol KAUST, Phys Sci & Engn Div, Thuwal 23955, Saudi Arabia; 5.Univ Western Australia, Sch Mol Sci, Perth, WA 6009, Australia; 6.King Abdullah Univ Sci & Technol KAUST, Adv Semicond Lab, Thuwal 23955, Saudi Arabia
推荐引用方式 GB/T 7714	Cui, Mei,Guo, Wei,Xu, Houqiang,et al. Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2021,15(6).
APA	Cui, Mei.,Guo, Wei.,Xu, Houqiang.,Jiang, Jie'an.,Chen, Li.,...&Ye, Jichun.(2021).Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,15(6).
MLA	Cui, Mei,et al."Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 15.6(2021).