Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection

doi:10.1126/sciadv.abb6500

	Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection
	Guo, Cheng 1,2; Hu, Yibin 1; Chen, Gang 1,2; Wei, Dacheng 3; Zhang, Libo 1,4; Chen, Zhiqingzi 1,2; Guo, Wanlong1,5 ; Xu, Huang 1,2; Kuo, Chia-Nung 6; Lue, Chin Shan 6; Bo, Xiangyan 7; Wan, Xiangang 7; Wang, Lin 1,2; Politano, Antonio 8,9; Chen, Xiaoshuang 1,2,10; Lu, Wei 1,2
	2020-09
发表期刊	SCIENCE ADVANCES (IF:11.7[JCR-2023],13.7[5-Year])
ISSN	2375-2548
卷号	6 期号:36
DOI	10.1126/sciadv.abb6500
摘要	Emergent topological Dirac semimetals afford fresh pathways for optoelectronics, although device implementation has been elusive to date. Specifically, palladium ditelluride (PdTe2) combines the capabilities provided by its peculiar band structure, with topologically protected electronic states, with advantages related to the occurrence of high-mobility charge carriers and ambient stability. Here, we demonstrate large photogalvanic effects with high anisotropy at terahertz frequency in PdTe2 -based devices. A responsivity of 10 A/W and a noise-equivalent power lower than 2 pW/Hz(0.5) are achieved at room temperature, validating the suitability of PdTe2 -based devices for applications in photosensing, polarization-sensitive detection, and large-area fast imaging. Our findings open opportunities for exploring uncooled and sensitive photoelectronic devices based on topological semimetals, especially in the highly pursuit terahertz band.
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	State Key Program for Basic Research of China[2018YFA0306200][2017YFA0305500] ; National Natural Science Foundation of China[61521005][61675222][61875217][91850208][51773041] ; STCSM Grants[1859078100][19590780100]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000567766700026
出版者	AMER ASSOC ADVANCEMENT SCIENCE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/123604
专题	物质科学与技术学院_硕士生
通讯作者	Wang, Lin; Politano, Antonio; Chen, Xiaoshuang
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China; 2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China; 3.Fudan Univ, Dept Macromol Sci, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China; 4.Donghua Univ, Dept Optoelect Sci & Engn, Shanghai 201620, Peoples R China; 5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China; 6.Natl Cheng Kung Univ, Dept Phys, Tainan 70101, Taiwan; 7.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China; 8.Univ Aquila, Dept Phys & Chem Sci, Via Vetoio, I-67100 Laquila, AQ, Italy; 9.CNR, IMM Ist Microelettron & Microsistemi, 8 Str 5, I-95121 Catania, Italy; 10.Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou, Peoples R China
推荐引用方式 GB/T 7714	Guo, Cheng,Hu, Yibin,Chen, Gang,et al. Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection[J]. SCIENCE ADVANCES,2020,6(36).
APA	Guo, Cheng.,Hu, Yibin.,Chen, Gang.,Wei, Dacheng.,Zhang, Libo.,...&Lu, Wei.(2020).Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection.SCIENCE ADVANCES,6(36).
MLA	Guo, Cheng,et al."Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection".SCIENCE ADVANCES 6.36(2020).