Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device

doi:10.1021/acsnano.0c04405

	Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device; Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device; Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device; Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device
	Chen, Lei 1,2; Wu, Lili 1,2; Wang, Yue 1,2; Pan, Yinping 1,3,4; Zhang, Denghui 1,2; Zeng, Junwen 1; Liu, Xiaoyu 1; Ma, Linxian 1; Peng, Wei 1,2; Wang, Yihua 3,4; Ren, Jie 1,2; Wang, Zhen1,2,5
	2020-09-22
发表期刊	ACS NANO
ISSN	1936-0851 ; 1936-0851 ; 1936-0851 ; 1936-0851
卷号	14 期号:9 页码:11002-11008
DOI	10.1021/acsnano.0c04405 ; 10.1021/acsnano.0c04405 ; 10.1021/acsnano.0c04405 ; 10.1021/acsnano.0c04405
摘要	Scalable memories that can match the speeds of superconducting logic circuits have long been desired to enable a superconducting computer. A superconducting loop that includes a Josephson junction can store a flux quantum state in picoseconds. However, the requirement for the loop inductance to create a bistate hysteresis sets a limit on the minimal area occupied by a single memory cell. Here, we present a miniaturized superconducting memory cell based on a three-dimensional (3D) Nb nano-superconducting quantum interference device (nano-SQUID). The major cell area here fits within an 8 X 9 mu m(2) rectangle with a cross-selected function for memory implementation. The cell shows periodic tunable hysteresis between two neighboring flux quantum states produced by bias current sweeping because of the large modulation depth of the 3D nano-SQUID (similar to 66%). Furthermore, the measured current-phase relations (CPRs) of nano-SQUIDs are shown to be skewed from a sine function, as predicted by theoretical modeling. The skewness and the critical current of 3D nano-SQUIDs are linearly correlated. It is also found that the hysteresis loop size is in a linear scaling relationship with the CPR skewness using the statistics from characterization of 26 devices. We show that the CPR skewness range of pi/4-3 pi/4 is equivalent to a large loop inductance in creating a stable bistate hysteresis for memory implementation. Therefore, the skewed CPR of 3D nano-SQUID enables further superconducting memory cell miniaturization by overcoming the inductance limitation of the loop area.; Scalable memories that can match the speeds of superconducting logic circuits have long been desired to enable a superconducting computer. A superconducting loop that includes a Josephson junction can store a flux quantum state in picoseconds. However, the requirement for the loop inductance to create a bistate hysteresis sets a limit on the minimal area occupied by a single memory cell. Here, we present a miniaturized superconducting memory cell based on a three-dimensional (3D) Nb nano-superconducting quantum interference device (nano-SQUID). The major cell area here fits within an 8 X 9 mu m(2) rectangle with a cross-selected function for memory implementation. The cell shows periodic tunable hysteresis between two neighboring flux quantum states produced by bias current sweeping because of the large modulation depth of the 3D nano-SQUID (similar to 66%). Furthermore, the measured current-phase relations (CPRs) of nano-SQUIDs are shown to be skewed from a sine function, as predicted by theoretical modeling. The skewness and the critical current of 3D nano-SQUIDs are linearly correlated. It is also found that the hysteresis loop size is in a linear scaling relationship with the CPR skewness using the statistics from characterization of 26 devices. We show that the CPR skewness range of pi/4-3 pi/4 is equivalent to a large loop inductance in creating a stable bistate hysteresis for memory implementation. Therefore, the skewed CPR of 3D nano-SQUID enables further superconducting memory cell miniaturization by overcoming the inductance limitation of the loop area.; Scalable memories that can match the speeds of superconducting logic circuits have long been desired to enable a superconducting computer. A superconducting loop that includes a Josephson junction can store a flux quantum state in picoseconds. However, the requirement for the loop inductance to create a bistate hysteresis sets a limit on the minimal area occupied by a single memory cell. Here, we present a miniaturized superconducting memory cell based on a three-dimensional (3D) Nb nano-superconducting quantum interference device (nano-SQUID). The major cell area here fits within an 8 X 9 mu m(2) rectangle with a cross-selected function for memory implementation. The cell shows periodic tunable hysteresis between two neighboring flux quantum states produced by bias current sweeping because of the large modulation depth of the 3D nano-SQUID (similar to 66%). Furthermore, the measured current-phase relations (CPRs) of nano-SQUIDs are shown to be skewed from a sine function, as predicted by theoretical modeling. The skewness and the critical current of 3D nano-SQUIDs are linearly correlated. It is also found that the hysteresis loop size is in a linear scaling relationship with the CPR skewness using the statistics from characterization of 26 devices. We show that the CPR skewness range of pi/4-3 pi/4 is equivalent to a large loop inductance in creating a stable bistate hysteresis for memory implementation. Therefore, the skewed CPR of 3D nano-SQUID enables further superconducting memory cell miniaturization by overcoming the inductance limitation of the loop area.; Scalable memories that can match the speeds of superconducting logic circuits have long been desired to enable a superconducting computer. A superconducting loop that includes a Josephson junction can store a flux quantum state in picoseconds. However, the requirement for the loop inductance to create a bistate hysteresis sets a limit on the minimal area occupied by a single memory cell. Here, we present a miniaturized superconducting memory cell based on a three-dimensional (3D) Nb nano-superconducting quantum interference device (nano-SQUID). The major cell area here fits within an 8 X 9 mu m(2) rectangle with a cross-selected function for memory implementation. The cell shows periodic tunable hysteresis between two neighboring flux quantum states produced by bias current sweeping because of the large modulation depth of the 3D nano-SQUID (similar to 66%). Furthermore, the measured current-phase relations (CPRs) of nano-SQUIDs are shown to be skewed from a sine function, as predicted by theoretical modeling. The skewness and the critical current of 3D nano-SQUIDs are linearly correlated. It is also found that the hysteresis loop size is in a linear scaling relationship with the CPR skewness using the statistics from characterization of 26 devices. We show that the CPR skewness range of pi/4-3 pi/4 is equivalent to a large loop inductance in creating a stable bistate hysteresis for memory implementation. Therefore, the skewed CPR of 3D nano-SQUID enables further superconducting memory cell miniaturization by overcoming the inductance limitation of the loop area.
关键词	3D nano-SQUID 3D nano-SQUID 3D nano-SQUID 3D nano-SQUID superconducting memory superconducting memory superconducting memory superconducting memory current-phase relation current-phase relation current-phase relation current-phase relation flux quantum flux quantum flux quantum flux quantum tunable hysteresis tunable hysteresis tunable hysteresis tunable hysteresis
收录类别	SCI ; SCI ; SCI ; SCI ; SCIE ; EI
语种	英语 ; 英语 ; 英语 ; 英语
资助项目	Frontier Science Key Programs of the CAS[QYZDY-SSW-JSC033] ; Frontier Science Key Programs of the CAS[QYZDY-SSW-JSC033] ; Frontier Science Key Programs of the CAS[QYZDY-SSW-JSC033] ; Frontier Science Key Programs of the CAS[QYZDY-SSW-JSC033] ; Young Investigator program of the CAS[2016217] ; Young Investigator program of the CAS[2016217] ; Young Investigator program of the CAS[2016217] ; Young Investigator program of the CAS[2016217] ; Strategic Priority Research program of the CAS[XDA18000000] ; Strategic Priority Research program of the CAS[XDA18000000] ; Strategic Priority Research program of the CAS[XDA18000000] ; Strategic Priority Research program of the CAS[XDA18000000] ; National Science Foundation of China[11827805] ; National Science Foundation of China[11827805] ; National Science Foundation of China[11827805] ; National Science Foundation of China[11827805] ; National Key R&D Program of China[2017YFF0206105] ; National Key R&D Program of China[2017YFF0206105] ; National Key R&D Program of China[2017YFF0206105] ; National Key R&D Program of China[2017YFF0206105]
WOS研究方向	Chemistry ; Chemistry ; Chemistry ; Chemistry ; Science & Technology - Other Topics ; Science & Technology - Other Topics ; Science & Technology - Other Topics ; Science & Technology - Other Topics ; Materials Science ; Materials Science ; Materials Science ; Materials Science
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Multidisciplinary ; Chemistry, Multidisciplinary ; Chemistry, Multidisciplinary ; Chemistry, Physical ; Chemistry, Physical ; Chemistry, Physical ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Nanoscience & Nanotechnology ; Nanoscience & Nanotechnology ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Materials Science, Multidisciplinary ; Materials Science, Multidisciplinary ; Materials Science, Multidisciplinary
WOS记录号	WOS:000576958800009 ; WOS:000576958800009 ; WOS:000576958800009 ; WOS:000576958800009
出版者	AMER CHEMICAL SOC ; AMER CHEMICAL SOC ; AMER CHEMICAL SOC ; AMER CHEMICAL SOC
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/123545
专题	物质科学与技术学院_特聘教授组_王镇组
通讯作者	Chen, Lei; Wang, Zhen
作者单位	1.Chinese Acad Sci, CAS Ctr Excellence Superconducting Elect CENSE, Shanghai Inst Microsyst & Informat Technol SIMIT, State Key Lab Funct Mat Informat,CAS, Shanghai 200050, Peoples R China; 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China; 3.Fudan Univ, Dept Phys, Shanghai 200438, Peoples R China; 4.Fudan Univ, State Key Lab Surface Phys, Shanghai 200438, Peoples R China; 5.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Chen, Lei,Wu, Lili,Wang, Yue,et al. Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device, Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device, Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device, Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device[J]. ACS NANO,2020,14, 14, 14, 14(9):11002-11008, 11002-11008, 11002-11008, 11002-11008.
APA	Chen, Lei.,Wu, Lili.,Wang, Yue.,Pan, Yinping.,Zhang, Denghui.,...&Wang, Zhen.(2020).Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device.ACS NANO,14(9),11002-11008.
MLA	Chen, Lei,et al."Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device".ACS NANO 14.9(2020):11002-11008.