Mid- and long-infrared emission properties of InxGa1-xAsySb1-y quaternary alloy with Type-II InAs/GaSb superlattice distribution
Du, Peng1,2,9; Fang, Xuan1,3; Zhao, Hongbin4; Fang, Dan1; Wang, Dongbo5; Gong, Qian6; Kou, Xufeng7; Liu, Xiaolei8; Wang, Xiaohua1
2020-12-20
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
Volume847
Status已发表
DOI10.1016/j.jallcom.2020.156390
Abstract

In this work, an InxGa1-xAsySb1-y quaternary alloy with a vertical distribution of type-II InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer alloy (FMA) process on a vicinal surface. X-ray diffraction patterns indicate that InxGa1-xAsySb1-y quaternary alloys with high In contents (up to 50%-65%) still maintain pure phases and good crystal quality. Transmission electron microscopy with energy-dispersive spectroscopy is used to confirm the constituent elements of the quaternary alloy. In addition, a significant strain distribution phenomenon parallel to the growth direction (epsilon(xx)) can be observed in the quaternary alloy using strain maps and related strain profiles. The mean strain peak values are close to those of conventional planar super-lattices, including InAs/GaSb and InAs/InAsSb. Photoluminescence measurements and k.p model calculations show that the vertical type-II InAs/GaSb superlattice distribution may generate a unique bandgap in the quaternary alloy by manipulating the FMA process on the vicinal surface. The quaternary alloy components and vertically-distributed super-lattice parameters can be regulated, and the quaternary alloy bandgap can cover the mid-to long-wavelength infrared regions. This work offers an effective route to solve the miscibility problem and use neoteric quaternary alloys with carrier emission from the unique bandgap for infrared optoelectronic devices. (C) 2020 Elsevier B.V. All rights reserved.

KeywordInxGa1-xAsySb1-y Quaternary alloy Superlattice Type-II band structure Strain
Indexed BySCI
WOS Research AreaChemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectChemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000573226200010
PublisherELSEVIER SCIENCE SA
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/123468
Collection信息科学与技术学院_PI研究组_寇煦丰组
信息科学与技术学院_特聘教授组_龚谦组
物质科学与技术学院_博士生
Affiliation1.Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Lasers, 7089 Wei Xing Rd, Changchun 130022, Peoples R China;
2.DCA Instruments Oy, Vajossuonkatu 8, FIN-20360 Turku, Finland;
3.Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen 518172, Guangdong, Peoples R China;
4.Gen Res Inst Nonferrous Met, State Key Lab Adv Mat Smart Sensing, Beijing 100088, Peoples R China;
5.Harbin Inst Technol, Sch Mat Sci & Engn, Dept Optoelect Informat Sci, Harbin 150001, Peoples R China;
6.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China;
7.ShanghaiTech Univ, Sch Informat Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China;
8.Collighter Co LTD, Bldg 1,Yard 6,KEGU 2nd St, Beijing 100000, Peoples R China;
9.Hunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Hunan, Peoples R China
Recommended Citation
GB/T 7714
Du, Peng,Fang, Xuan,Zhao, Hongbin,et al. Mid- and long-infrared emission properties of InxGa1-xAsySb1-y quaternary alloy with Type-II InAs/GaSb superlattice distribution[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2020,847.
APA Du, Peng.,Fang, Xuan.,Zhao, Hongbin.,Fang, Dan.,Wang, Dongbo.,...&Wang, Xiaohua.(2020).Mid- and long-infrared emission properties of InxGa1-xAsySb1-y quaternary alloy with Type-II InAs/GaSb superlattice distribution.JOURNAL OF ALLOYS AND COMPOUNDS,847.
MLA Du, Peng,et al."Mid- and long-infrared emission properties of InxGa1-xAsySb1-y quaternary alloy with Type-II InAs/GaSb superlattice distribution".JOURNAL OF ALLOYS AND COMPOUNDS 847(2020).
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