β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

doi:10.1007/s11433-020-1533-0

	β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process
	Yibo Wang 1; Wenhui Xu2 ; Tiangui You 2; Fengwen Mu 3; Haodong Hu 1; Yan Liu 1; Hao Huang2 ; Tadatomo Suga 3; Genquan Han 1; Xin Ou 2; Yue Hao 1
	2020-04
发表期刊	SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY (IF:6.4[JCR-2023],4.9[5-Year])
ISSN	1674-7348
发表状态	已发表
DOI	10.1007/s11433-020-1533-0
收录类别	SCI
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/123370
专题	物质科学与技术学院_特聘教授组_王曦组物质科学与技术学院_硕士生物质科学与技术学院_博士生
共同第一作者	Wenhui Xu
通讯作者	Genquan Han; Xin Ou
作者单位	1.The State Key Discipline Lab of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China 2.The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China 3.The Collaborative Research Center, Meisei University, Hino-shi, Tokyo, 191-8506, Japan
推荐引用方式 GB/T 7714	Yibo Wang,Wenhui Xu,Tiangui You,et al. β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2020.
APA	Yibo Wang.,Wenhui Xu.,Tiangui You.,Fengwen Mu.,Haodong Hu.,...&Yue Hao.(2020).β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY.
MLA	Yibo Wang,et al."β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY (2020).