Effects of Sulfur Doping on Generalized Stacking Fault Energy of Indium Phosphide

doi:10.1007/s13391-020-00238-9

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	Effects of Sulfur Doping on Generalized Stacking Fault Energy of Indium Phosphide
	Wang, Chengru 1; Wu, Han2 ; Zhu, Hong 1; Xie, Chaoying 1
	2020-09
发表期刊	ELECTRONIC MATERIALS LETTERS (IF:2.1[JCR-2023],2.1[5-Year])
ISSN	1738-8090
EISSN	2093-6788
卷号	16 期号:5 页码:506-511
发表状态	已发表
DOI	10.1007/s13391-020-00238-9
摘要	Indium phosphide (InP) is one of the most important optoelectronic materials, while stacking faults (SFs), as planar defects, are usually inevitable during the growth of InP possibly due to the low SF energy. As n-type dopants, sulfur atoms are generally used to change the electron concentration of InP-based devices, whereas the effects of sulfur doping on SFs of InP have not been studied in detail. In this work, the generalized stacking fault (GSF) energies of pure and sulfur-doped InP have been investigated by gliding the layers successively in the framework of first principle calculations. The results reveal the stable SF energies of InP are low and extrinsic stacking fault could be seen as the twin embryos in pure InP. Sulfur doping could decrease the GSF energies dramatically due to the lower charge density along In-S bonds than along In-P bonds, which consequently enhances the ability of twinning locally. The preferential segregation of sulfur atoms on SFs or twin boundaries could further promote the thickening of microtwin in InP. These results are of great significance to the understanding of the formation of planar defects in n-type doped III-V compounds.
关键词	Stacking fault Twinning ability Sulfur doping Segregation Indium phosphide
收录类别	SCI ; SCIE ; EI
语种	英语
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:000554418900001
出版者	KOREAN INST METALS MATERIALS
EI主题词	Indium phosphide
WOS关键词	TWINNING SUPERLATTICES ; OPTICAL-PROPERTIES ; INP ; DEFORMATION ; CRYSTALS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/122941
专题	物质科学与技术学院_公共教学平台_物理基础与专业实验教学中心
通讯作者	Zhu, Hong; Xie, Chaoying
作者单位	1.Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
推荐引用方式 GB/T 7714	Wang, Chengru,Wu, Han,Zhu, Hong,et al. Effects of Sulfur Doping on Generalized Stacking Fault Energy of Indium Phosphide[J]. ELECTRONIC MATERIALS LETTERS,2020,16(5):506-511.
APA	Wang, Chengru,Wu, Han,Zhu, Hong,&Xie, Chaoying.(2020).Effects of Sulfur Doping on Generalized Stacking Fault Energy of Indium Phosphide.ELECTRONIC MATERIALS LETTERS,16(5),506-511.
MLA	Wang, Chengru,et al."Effects of Sulfur Doping on Generalized Stacking Fault Energy of Indium Phosphide".ELECTRONIC MATERIALS LETTERS 16.5(2020):506-511.