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Selection of contact materials to p-type halide perovskite by electronegativity matching | |
2020-06-01 | |
发表期刊 | AIP ADVANCES |
ISSN | none |
EISSN | 2158-3226 |
卷号 | 10期号:6 |
发表状态 | 已发表 |
DOI | 10.1063/5.0008406 |
摘要 | The performance of perovskite optoelectronic devices depends critically on the contact between the active layer and charge transport materials. To reveal the mechanism of barrier formation on perovskite surfaces, we studied Schottky junctions between various metals and a p-type perovskite CsSnBr3. By constructing slab models of the junction interface and aligning atomic core levels, the contacts between Au/CsSnBr3 and graphite/CsSnBr3 were found to be ohmic, but various other metals produced Schottky junctions with CsSnBr3. These calculation results, supported by x-ray photoelectron spectroscopy measurements, suggest that the barrier height of a metal/CsSnBr3 junction is a linear function of the metal's electronegativity, rather than its work function. By introducing the concept of effective electronegativity for compounds, this trend was extended to a general rule that a suitable transport material should have an effective electronegativity to match that of the perovskite. (c) 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | State Key Research Project[2016YFA0204000] ; Shell-CAS Frontier Sciences Program[PT78963] |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
WOS记录号 | WOS:000542798100001 |
出版者 | AMER INST PHYSICS |
WOS关键词 | ELECTRONIC-PROPERTIES ; INTERFACE ; EFFICIENCY ; STATES |
原始文献类型 | Article |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/121870 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_米启兮组 物质科学与技术学院_硕士生 物质科学与技术学院_博士生 |
通讯作者 | Mi, Qixi |
作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Long, Ruiying,Li, Binghan,Mi, Qixi. Selection of contact materials to p-type halide perovskite by electronegativity matching[J]. AIP ADVANCES,2020,10(6). |
APA | Long, Ruiying,Li, Binghan,&Mi, Qixi.(2020).Selection of contact materials to p-type halide perovskite by electronegativity matching.AIP ADVANCES,10(6). |
MLA | Long, Ruiying,et al."Selection of contact materials to p-type halide perovskite by electronegativity matching".AIP ADVANCES 10.6(2020). |
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