Selection of contact materials to p-type halide perovskite by electronegativity matching
2020-06-01
发表期刊AIP ADVANCES
ISSNnone
EISSN2158-3226
卷号10期号:6
发表状态已发表
DOI10.1063/5.0008406
摘要

The performance of perovskite optoelectronic devices depends critically on the contact between the active layer and charge transport materials. To reveal the mechanism of barrier formation on perovskite surfaces, we studied Schottky junctions between various metals and a p-type perovskite CsSnBr3. By constructing slab models of the junction interface and aligning atomic core levels, the contacts between Au/CsSnBr3 and graphite/CsSnBr3 were found to be ohmic, but various other metals produced Schottky junctions with CsSnBr3. These calculation results, supported by x-ray photoelectron spectroscopy measurements, suggest that the barrier height of a metal/CsSnBr3 junction is a linear function of the metal's electronegativity, rather than its work function. By introducing the concept of effective electronegativity for compounds, this trend was extended to a general rule that a suitable transport material should have an effective electronegativity to match that of the perovskite. (c) 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

收录类别SCI ; SCIE ; EI
语种英语
资助项目State Key Research Project[2016YFA0204000] ; Shell-CAS Frontier Sciences Program[PT78963]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000542798100001
出版者AMER INST PHYSICS
WOS关键词ELECTRONIC-PROPERTIES ; INTERFACE ; EFFICIENCY ; STATES
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/121870
专题物质科学与技术学院
物质科学与技术学院_PI研究组_米启兮组
物质科学与技术学院_硕士生
物质科学与技术学院_博士生
通讯作者Mi, Qixi
作者单位
1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
第一作者单位物质科学与技术学院
通讯作者单位物质科学与技术学院
第一作者的第一单位物质科学与技术学院
推荐引用方式
GB/T 7714
Long, Ruiying,Li, Binghan,Mi, Qixi. Selection of contact materials to p-type halide perovskite by electronegativity matching[J]. AIP ADVANCES,2020,10(6).
APA Long, Ruiying,Li, Binghan,&Mi, Qixi.(2020).Selection of contact materials to p-type halide perovskite by electronegativity matching.AIP ADVANCES,10(6).
MLA Long, Ruiying,et al."Selection of contact materials to p-type halide perovskite by electronegativity matching".AIP ADVANCES 10.6(2020).
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
个性服务
查看访问统计
谷歌学术
谷歌学术中相似的文章
[Long, Ruiying]的文章
[Li, Binghan]的文章
[Mi, Qixi]的文章
百度学术
百度学术中相似的文章
[Long, Ruiying]的文章
[Li, Binghan]的文章
[Mi, Qixi]的文章
必应学术
必应学术中相似的文章
[Long, Ruiying]的文章
[Li, Binghan]的文章
[Mi, Qixi]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。