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ShanghaiTech University Knowledge Management System
| InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency | |
| 2020-05-28 | |
| 发表期刊 | OPTICAL AND QUANTUM ELECTRONICS (IF:3.3[JCR-2023],2.7[5-Year]) |
| ISSN | 1572817X |
| 卷号 | 52期号:6 |
| 发表状态 | 已发表 |
| DOI | 10.1007/s11082-020-02422-5 |
| 摘要 | We describe a planar front-illuminated InGaAsP/InP single-photon avalanche diode that is made in a separate absorption, grading, charge and multiplication heterostructure. By controlling the electric field in the center and periphery of the active area, the photoexcited carriers are mainly concentrated in the active area, especially in the center. Deep level defects are not obviously observed, and the dominated generation recommendation current and the trap assisted tunneling current are greatly suppressed. When operated in gated-mode, a photon detection efficiency (PDE) of 70% is achieved, with the DCR of 48 kHz at 226 K. And the afterpulse probability remains below 2.2% for PDEs up to 62.7%. |
| 收录类别 | SCI ; SCIE ; EI |
| 语种 | 英语 |
| 资助项目 | National key R&D Program of China[2016YFB0402404] ; Natural Science Foundation of China[11991063] ; Key research project of Frontier Science of Chinese Academy of Sciences[QYZDJ-SSW-JSC007] ; Shanghai Municipal Science and Technology Major Project[2019SHZDZX01] |
| WOS研究方向 | Engineering ; Physics ; Optics |
| WOS类目 | Engineering, Electrical & Electronic ; Quantum Science & Technology ; Optics |
| 出版者 | Springer |
| EI入藏号 | 20202208769830 |
| EI主题词 | Efficiency ; Electric fields ; Grading ; III-V semiconductors ; Particle beams ; Photodetectors ; Photons |
| EI分类号 | Electricity: Basic Concepts and Phenomena:701.1 ; Electron Tubes:714.1 ; Production Engineering:913.1 ; Atomic and Molecular Physics:931.3 ; High Energy Physics:932.1 |
| 原始文献类型 | Article |
| 引用统计 | 正在获取...
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| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/121564 |
| 专题 | 物质科学与技术学院_博士生 |
| 通讯作者 | Wang, Wenjuan |
| 作者单位 | 1.University of Shanghai for Science and Technology, 516 Jungong Road, Shanghai; 200093, China 2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai; 200083, China 3.University of Chinese Academy of Sciences, No. 19 A Yu Quan Road, Beijing; 100049, China 4.Shanghai Tech University, Shanghai, 393 Huaxia Middle Road, Shanghai; 201210, China 5.Shanghai Posts and Telecommunications Designing Consulting Institute Co., Ltd, 38 Guo Kang Road, Shanghai; 200092, China |
| 推荐引用方式 GB/T 7714 | Zhou, Min,Wang, Wenjuan,Qu, Huidan,et al. InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency[J]. OPTICAL AND QUANTUM ELECTRONICS,2020,52(6). |
| APA | Zhou, Min.,Wang, Wenjuan.,Qu, Huidan.,Han, Hao.,Zhu, Yicheng.,...&Lu, Wei.(2020).InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency.OPTICAL AND QUANTUM ELECTRONICS,52(6). |
| MLA | Zhou, Min,et al."InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency".OPTICAL AND QUANTUM ELECTRONICS 52.6(2020). |
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