Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface

doi:10.1063/5.0004427

	Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface
	Lin, Jiajie 1,2; You, Tiangui 1; Jin, Tingting 1,2; Liang, Hao 1,2; Wan, Wenjian 3; Huang, Hao1,4 ; Zhou, Min 1; Mu, Fengwen 5; Yan, Youquan 1,2; Huang, Kai 1; Zhao, Xiaomeng 1; Zhang, Jiaxiang 1; Wang, Shumin 6; Gao, Peng 7; Ou, Xin 1,2
	2020-05-01
发表期刊	APL MATERIALS (IF:5.3[JCR-2023],5.5[5-Year])
ISSN	2166-532X
卷号	8 期号:5
发表状态	已发表
DOI	10.1063/5.0004427
摘要	Heterogeneous integration of compound semiconductors on a Si platform leads to advanced device applications in the field of Si photonics and high frequency electronics. However, the unavoidable bubbles formed at the bonding interface are detrimental for achieving a high yield of dissimilar semiconductor integration by the direct wafer bonding technology. In this work, lateral outgassing surface trenches (LOTs) are introduced to efficiently inhibit the bubbles. It is found that the chemical reactions in InP-Si bonding are similar to those in Si-Si bonding, and the generated gas can escape via the LOTs. The outgassing efficiency is dominated by LOTs' spacing, and moreover, the relationship between bubble formation and the LOT's structure is well described by a thermodynamic model. With the method explored in this work, a 2-in. bubble-free crystalline InP thin film integrated on the Si substrate with LOTs is obtained by the ion-slicing and wafer bonding technology. The quantum well active region grown on this Si-based InP film shows a superior photoemission efficiency, and it is found to be 65% as compared to its bulk counterpart.
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	National Key RD Program of China[2017YFE0131300] ; National Natural Science Foundation of China[U1732268][61874128][11622545][61851406][11705262] ; Frontier Science Key Program of CAS[QYZDY-SSW-JSC032] ; Chinese-Austrian Cooperative RD Project[GJHZ201950] ; Shanghai Science and Technology Innovation Action Plan Program[17511106202] ; Program of Shanghai Academic Research Leader[19XD1404600] ; Shanghai Sailing Program[19YF1456200][19YF1456400] ; K. C. Wong Education Foundation[GJTD-2019-11]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000537057100002
出版者	AMER INST PHYSICS
WOS关键词	PLATELETS ; GROWTH ; OXIDES
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/121543
专题	物质科学与技术学院_博士生
通讯作者	Ou, Xin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, 865 Changning Rd, Shanghai 200050, Peoples R China 4.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Waseda Univ, Kagami Mem Res Inst Mat Sci & Technol, Shinjuku Ku, Tokyo 1690051, Japan 6.Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden 7.Tianjin Inst Power Sources, Sci & Technol Power Sources Lab, Tianjin 300384, Peoples R China
推荐引用方式 GB/T 7714	Lin, Jiajie,You, Tiangui,Jin, Tingting,et al. Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface[J]. APL MATERIALS,2020,8(5).
APA	Lin, Jiajie.,You, Tiangui.,Jin, Tingting.,Liang, Hao.,Wan, Wenjian.,...&Ou, Xin.(2020).Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface.APL MATERIALS,8(5).
MLA	Lin, Jiajie,et al."Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface".APL MATERIALS 8.5(2020).