ShanghaiTech University Knowledge Management System
| Smaller antenna-gate gap for higher sensitivity of GaN/AlGaN HEMT terahertz detectors | |
| 2020-04-20 | |
| 发表期刊 | APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year]) |
| ISSN | 0003-6951 |
| EISSN | 1077-3118 |
| 卷号 | 116期号:16 |
| 发表状态 | 已发表 |
| DOI | 10.1063/1.5142436 |
| 摘要 | We report an attempt to improve the sensitivity of terahertz detection based on self-mixing in antenna-coupled field-effect transistors by enhancing the field-effect factor and the antenna factor with a reduced gate length and a reduced antenna-gate gap, respectively. An optical noise equivalent power (NEP) of 3.7pW/Hz at 0.65THz was achieved in a GaN/AlGaN high-electron-mobility transistor (HEMT) with a gate length of 300nm and an antenna-gate gap of 200nm at room temperature. It was found that the antenna factor was inversely proportional to the antenna-gate gap, and the responses upon coherent/incoherent terahertz irradiation were well described by the self-mixing model. To fill the NEP gap of 0.1-1pW/Hz between room-temperature and cryogenic detectors by HEMT-based detectors at room temperature, impedance match needs to be carefully considered. |
| 收录类别 | SCI ; SCIE |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[61771466][61775231][61975227] ; Youth Innovation Promotion Association CAS[2017372] ; Six Talent Peaks Project of Jiangsu Province, China[XXRJ-079] ; Russian Foundation for Basic Research[17-52-53063] |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| WOS记录号 | WOS:000529892900005 |
| 出版者 | AMER INST PHYSICS |
| 原始文献类型 | Article |
| 引用统计 | 正在获取...
|
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/120891 |
| 专题 | 物质科学与技术学院_硕士生 物质科学与技术学院_博士生 |
| 通讯作者 | Qin, Hua |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanob, Suzhou 215123, Peoples R China 2.Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 4.Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China 5.Suzhou Univ Sci & Technol, Coll Elect & Informat Engn, Suzhou 215009, Peoples R China 6.Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Saratov Branch, Saratov 410019, Russia |
| 推荐引用方式 GB/T 7714 | Sun, Jiandong,Feng, Wei,Ding, Qingfeng,et al. Smaller antenna-gate gap for higher sensitivity of GaN/AlGaN HEMT terahertz detectors[J]. APPLIED PHYSICS LETTERS,2020,116(16). |
| APA | Sun, Jiandong.,Feng, Wei.,Ding, Qingfeng.,Zhu, Yifan.,Zhang, Zhipeng.,...&Popov, V. V..(2020).Smaller antenna-gate gap for higher sensitivity of GaN/AlGaN HEMT terahertz detectors.APPLIED PHYSICS LETTERS,116(16). |
| MLA | Sun, Jiandong,et al."Smaller antenna-gate gap for higher sensitivity of GaN/AlGaN HEMT terahertz detectors".APPLIED PHYSICS LETTERS 116.16(2020). |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
修改评论
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。