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ShanghaiTech University Knowledge Management System
Two-dimensional halide perovskite lateral epitaxial heterostructures | |
2020-04 | |
发表期刊 | NATURE (IF:50.5[JCR-2023],54.4[5-Year]) |
ISSN | 0028-0836 |
EISSN | 1476-4687 |
卷号 | 580期号:7805页码:614-+ |
发表状态 | 已发表 |
DOI | 10.1038/s41586-020-2219-7 |
摘要 | Epitaxial heterostructures based on oxide perovskites and III-V, II-VI and transition metal dichalcogenide semiconductors form the foundation of modern electronics and optoelectronics(1-7). Halide perovskites-an emerging family of tunable semiconductors with desirable properties-are attractive for applications such as solution-processed solar cells, light-emitting diodes, detectors and lasers(8-15). Their inherently soft crystal lattice allows greater tolerance to lattice mismatch, making them promising for heterostructure formation and semiconductor integration(16,17). Atomically sharp epitaxial interfaces are necessary to improve performance and for device miniaturization. However, epitaxial growth of atomically sharp heterostructures of halide perovskites has not yet been achieved, owing to their high intrinsic ion mobility, which leads to interdiffusion and large junction widths(18-21), and owing to their poor chemical stability, which leads to decomposition of prior layers during the fabrication of subsequent layers. Therefore, understanding the origins of this instability and identifying effective approaches to suppress ion diffusion are of great importance(22-26). Here we report an effective strategy to substantially inhibit in-plane ion diffusion in two-dimensional halide perovskites by incorporating rigid pi-conjugated organic ligands. We demonstrate highly stable and tunable lateral epitaxial heterostructures, multiheterostructures and superlattices. Near-atomically sharp interfaces and epitaxial growth are revealed by low-dose aberration-corrected high-resolution transmission electron microscopy. Molecular dynamics simulations confirm the reduced heterostructure disorder and larger vacancy formation energies of the two-dimensional perovskites in the presence of conjugated ligands. These findings provide insights into the immobilization and stabilization of halide perovskite semiconductors and demonstrate a materials platform for complex and molecularly thin superlattices, devices and integrated circuits. |
收录类别 | SCI ; SCIE |
WOS研究方向 | Science & Technology - Other Topics |
WOS类目 | Multidisciplinary Sciences |
WOS记录号 | WOS:000529600500011 |
出版者 | NATURE PUBLISHING GROUP |
WOS关键词 | BASIS-SETS ; NANOCRYSTALS ; TRANSITION ; GROWTH |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/120866 |
专题 | 物质科学与技术学院_硕士生 物质科学与技术学院_PI研究组_于奕组 物质科学与技术学院_博士生 |
共同第一作者 | Yuan, Biao |
通讯作者 | Savoie, Brett M.; Yu, Yi; Dou, Letian |
作者单位 | 1.Purdue Univ, Davidson Sch Chem Engn, W Lafayette, IN 47907 USA 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 3.MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA 4.MIT, RLE, 77 Massachusetts Ave, Cambridge, MA 02139 USA 5.Univ Calif Berkeley, Dept Chem, Berkeley, CA USA 6.Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA USA 7.Kavli Energy NanoSci Inst, Berkeley, CA USA 8.Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA |
通讯作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Shi, Enzheng,Yuan, Biao,Shiring, Stephen B.,et al. Two-dimensional halide perovskite lateral epitaxial heterostructures[J]. NATURE,2020,580(7805):614-+. |
APA | Shi, Enzheng.,Yuan, Biao.,Shiring, Stephen B..,Gao, Yao.,Akriti.,...&Dou, Letian.(2020).Two-dimensional halide perovskite lateral epitaxial heterostructures.NATURE,580(7805),614-+. |
MLA | Shi, Enzheng,et al."Two-dimensional halide perovskite lateral epitaxial heterostructures".NATURE 580.7805(2020):614-+. |
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