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Two-dimensional halide perovskite lateral epitaxial heterostructures
2020-04
发表期刊NATURE (IF:50.5[JCR-2023],54.4[5-Year])
ISSN0028-0836
EISSN1476-4687
卷号580期号:7805页码:614-+
发表状态已发表
DOI10.1038/s41586-020-2219-7
摘要

Epitaxial heterostructures based on oxide perovskites and III-V, II-VI and transition metal dichalcogenide semiconductors form the foundation of modern electronics and optoelectronics(1-7). Halide perovskites-an emerging family of tunable semiconductors with desirable properties-are attractive for applications such as solution-processed solar cells, light-emitting diodes, detectors and lasers(8-15). Their inherently soft crystal lattice allows greater tolerance to lattice mismatch, making them promising for heterostructure formation and semiconductor integration(16,17). Atomically sharp epitaxial interfaces are necessary to improve performance and for device miniaturization. However, epitaxial growth of atomically sharp heterostructures of halide perovskites has not yet been achieved, owing to their high intrinsic ion mobility, which leads to interdiffusion and large junction widths(18-21), and owing to their poor chemical stability, which leads to decomposition of prior layers during the fabrication of subsequent layers. Therefore, understanding the origins of this instability and identifying effective approaches to suppress ion diffusion are of great importance(22-26). Here we report an effective strategy to substantially inhibit in-plane ion diffusion in two-dimensional halide perovskites by incorporating rigid pi-conjugated organic ligands. We demonstrate highly stable and tunable lateral epitaxial heterostructures, multiheterostructures and superlattices. Near-atomically sharp interfaces and epitaxial growth are revealed by low-dose aberration-corrected high-resolution transmission electron microscopy. Molecular dynamics simulations confirm the reduced heterostructure disorder and larger vacancy formation energies of the two-dimensional perovskites in the presence of conjugated ligands. These findings provide insights into the immobilization and stabilization of halide perovskite semiconductors and demonstrate a materials platform for complex and molecularly thin superlattices, devices and integrated circuits.

收录类别SCI ; SCIE
WOS研究方向Science & Technology - Other Topics
WOS类目Multidisciplinary Sciences
WOS记录号WOS:000529600500011
出版者NATURE PUBLISHING GROUP
WOS关键词BASIS-SETS ; NANOCRYSTALS ; TRANSITION ; GROWTH
原始文献类型Article
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/120866
专题物质科学与技术学院_硕士生
物质科学与技术学院_PI研究组_于奕组
物质科学与技术学院_博士生
共同第一作者Yuan, Biao
通讯作者Savoie, Brett M.; Yu, Yi; Dou, Letian
作者单位
1.Purdue Univ, Davidson Sch Chem Engn, W Lafayette, IN 47907 USA
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China
3.MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA
4.MIT, RLE, 77 Massachusetts Ave, Cambridge, MA 02139 USA
5.Univ Calif Berkeley, Dept Chem, Berkeley, CA USA
6.Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA USA
7.Kavli Energy NanoSci Inst, Berkeley, CA USA
8.Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
通讯作者单位物质科学与技术学院
推荐引用方式
GB/T 7714
Shi, Enzheng,Yuan, Biao,Shiring, Stephen B.,et al. Two-dimensional halide perovskite lateral epitaxial heterostructures[J]. NATURE,2020,580(7805):614-+.
APA Shi, Enzheng.,Yuan, Biao.,Shiring, Stephen B..,Gao, Yao.,Akriti.,...&Dou, Letian.(2020).Two-dimensional halide perovskite lateral epitaxial heterostructures.NATURE,580(7805),614-+.
MLA Shi, Enzheng,et al."Two-dimensional halide perovskite lateral epitaxial heterostructures".NATURE 580.7805(2020):614-+.
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