Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

doi:10.1088/1361-6528/ab6686

	Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition
	Song, Yekai1,2,3 ; Li, Zhuojun 1,2; Li, Hui 4; Tang, Shujie 1,2; Mu, Gang 1,2; Xu, Lixuan 1,2,5; Peng, Wei 1,2; Shen, Dawei 1,2; Chen, Yulin3 ; Xie, Xiaoming1,2,3 ; Jiang, Mianheng1,2,3
	2020-04-17
发表期刊	NANOTECHNOLOGY
ISSN	0957-4484
EISSN	1361-6528
卷号	31 期号:16
发表状态	已发表
DOI	10.1088/1361-6528/ab6686
摘要	Recently, Bi2O2Se was revealed as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high-quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three-dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi2O2Se films on SrTiO3 (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm(2) V-1 s(-1) at room temperature in a 70 nm thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.
关键词	Bi2O2Se high mobility 2D materials heterostructure pulsed laser deposition
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收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	'Strategic Priority Research Program (B)' of the Chinese Academy of Sciences[XDB04010600]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000520160800001
出版者	IOP PUBLISHING LTD
EI入藏号	20201508399762
EI主题词	Bismuth compounds ; Crystallography ; D region ; Electron mobility ; Electrons ; Heterojunctions ; Pulsed laser deposition ; Pulsed lasers ; Selenium compounds ; Semiconductor lasers ; Strontium titanates ; Substrates ; Temperature ; Thick films ; Thin films ; Titanium compounds
EI分类号	Meteorology:443 ; Thermodynamics:641.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Lasers:744 ; Chemical Products Generally:804 ; Crystalline Solids:933.1 ; Crystal Growth:933.1.2
WOS关键词	TRANSPORT-PROPERTIES ; MOBILITY ; LAYERS
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/119192
专题	物质科学与技术学院_特聘教授组_陈宇林物质科学与技术学院物质科学与技术学院_特聘教授组_谢晓明组物质科学与技术学院_硕士生
通讯作者	Li, Zhuojun
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 4.Shenzhen Technol Univ, Coll Engn Phys, Shenzhen 518118, Peoples R China 5.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Song, Yekai,Li, Zhuojun,Li, Hui,et al. Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition[J]. NANOTECHNOLOGY,2020,31(16).
APA	Song, Yekai.,Li, Zhuojun.,Li, Hui.,Tang, Shujie.,Mu, Gang.,...&Jiang, Mianheng.(2020).Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition.NANOTECHNOLOGY,31(16).
MLA	Song, Yekai,et al."Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition".NANOTECHNOLOGY 31.16(2020).