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Amorphous ZnO/PbS Quantum Dots Heterojunction for Efficient Responsivity Broadband Photodetectors | |
2020-02-19 | |
发表期刊 | ACS APPLIED MATERIALS & INTERFACES |
ISSN | 1944-8244 |
EISSN | 1944-8252 |
卷号 | 12期号:7页码:8403-8410 |
发表状态 | 已发表 |
DOI | 10.1021/acsami.9b19486 |
摘要 | The integration of lead sulfide quantum dots (QDs) with a high-conductivity material that is compatible with a scalable fabrication is an important route for the applications of QD-based photodetectors. Herein, we first developed a broadband photodetector by combining amorphous ZnO and PbS QDs, forming a heterojunction structure. The photodetector showed detectivity up to 7.9 X 10(12) and 4.1 X 10(11) jones under 640 and 1310 nm illumination, respectively. The role of the oxygen background pressure in the electronic structure of ZnO films grown by pulsed laser deposition was systematically studied, and it was found to play an important role in the conductivity associated with the variation of the oxygen vacancy concentration. By increasing the oxygen vacancy concentration, the electron mobility of amorphous ZnO layers dramatically increased and the work function decreased, which were beneficial for the photocurrent enhancement of ZnO/PbS QD photodetectors. Our results provide a simple and highly scalable approach to develop broadband photodetectors with high performance. |
关键词 | amorphous ZnO oxygen vacancy mobility heterojunction broadband photodetector |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS记录号 | WOS:000515214300059 |
出版者 | AMER CHEMICAL SOC |
EI入藏号 | 20201008249439 |
EI主题词 | Carbon Quantum Dots ; Carrier mobility ; Electronic structure ; Graphene quantum dots ; Heterojunctions ; II-VI semiconductors ; IV-VI semiconductors ; Lead compounds ; Nanocrystals ; Oxygen ; Photodetectors ; Photons ; Pulsed laser deposition ; Semiconductor quantum dots ; Sulfur compounds ; Zinc oxide |
EI分类号 | Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Laser Applications:744.9 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3 ; Crystalline Solids:933.1 |
WOS关键词 | THIN-FILMS ; NIR PHOTODETECTOR ; ZINC-OXIDE ; PERFORMANCE ; PHOTORESPONSE ; PASSIVATION ; ULTRAVIOLET ; CONDUCTION ; NANOWIRES ; DEFECTS |
原始文献类型 | Journal article (JA) |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/114861 |
专题 | 物质科学与技术学院_硕士生 物质科学与技术学院_PI研究组_宁志军组 物质科学与技术学院_PI研究组_杨楠组 物质科学与技术学院_博士生 |
通讯作者 | Ning, Zhijun; Yang, Nan |
作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Natl Res Council CNR SPIN, I-00133 Rome, Italy |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Wang, Xinyu,Xu, Kaimin,Yan, Xiaoyan,et al. Amorphous ZnO/PbS Quantum Dots Heterojunction for Efficient Responsivity Broadband Photodetectors[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(7):8403-8410. |
APA | Wang, Xinyu.,Xu, Kaimin.,Yan, Xiaoyan.,Xiao, Xiongbin.,Aruta, Carmela.,...&Yang, Nan.(2020).Amorphous ZnO/PbS Quantum Dots Heterojunction for Efficient Responsivity Broadband Photodetectors.ACS APPLIED MATERIALS & INTERFACES,12(7),8403-8410. |
MLA | Wang, Xinyu,et al."Amorphous ZnO/PbS Quantum Dots Heterojunction for Efficient Responsivity Broadband Photodetectors".ACS APPLIED MATERIALS & INTERFACES 12.7(2020):8403-8410. |
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