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A Compact Memory Structure based on 2T1R Against Single-Event Upset in RRAM Arrays | |
2019-10 | |
会议录名称 | 2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON)
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ISSN | 2162-7541 |
页码 | 1-4 |
发表状态 | 已发表 |
DOI | 10.1109/ASICON47005.2019.8983491 |
摘要 | The single-event upset (SEU) has significant influence on the reliability of 1-transistor-1-RRAM (1T1R) array due to heavy ion strikes. This paper proposes a compact memory structure based on 2-transistor-1-RRAM (2T1R), which exploits the signal space between adjacent cells in the RRAM array structure. Results show that the proposed structure can successfully alleviate the SEU effect in RRAM array - it eliminates the overhead of 1ns delay and 400pJ power consumption of READ operation, as well as 2ns delay of RESET operation, at the cost of only 1.9% area overhead compared to the 1T2R structure. |
会议地点 | Chongqing, China |
会议日期 | 29 Oct.-1 Nov. 2019 |
URL | 查看原文 |
收录类别 | EI ; CPCI ; CPCI-S |
语种 | 英语 |
WOS研究方向 | Engineering ; Telecommunications |
WOS类目 | Engineering, Electrical & Electronic ; Telecommunications |
WOS记录号 | WOS:000541465700065 |
EI入藏号 | 20201408379058 |
EI主题词 | Heavy ions ; Radiation hardening ; Transients |
WOS关键词 | 1T1R |
原始文献类型 | Proceedings Paper |
来源库 | IEEE |
引用统计 | 正在获取...
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文献类型 | 会议论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/114807 |
专题 | 信息科学与技术学院_博士生 信息科学与技术学院_PI研究组_周平强组 信息科学与技术学院_硕士生 |
作者单位 | School of Information Science and Technology, Shanghaitech University,Shanghai,China,201210 |
第一作者单位 | 信息科学与技术学院 |
第一作者的第一单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Yu Ma,Dingcheng Jia,Huifan Zhang,et al. A Compact Memory Structure based on 2T1R Against Single-Event Upset in RRAM Arrays[C],2019:1-4. |
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