×
验证码:
换一张
Forgotten Password?
Stay signed in
×
Log In By IDS
Login
Chinese
|
English
上海科技大学知识管理系统
ShanghaiTech University Knowledge Management System
Log In By IDS
Login
Register
ALL
ORCID
Title
Creator
Date Issued
Keyword
Document Type
DOI
Source Publication
Date Accessioned
Indexed By
Publisher
Study Hall
Image search
Paste the image URL
Home
Collections
Authors
DocType
Subjects
K-Map
K-Integration
Study Hall
Search in the results
Collection
School of... [30]
School of ... [4]
Authors
Yang YuMe... [30]
Zhu ZhiFen... [9]
Yuan Zheng... [5]
Kou XuFeng [4]
Fu ZhenXia... [4]
Ren Jie [4]
More...
Document Type
Journal a... [22]
Conference... [7]
Patent [1]
Date Issued
2023 [3]
2022 [12]
2021 [9]
2020 [6]
Source Publication
IEEE ELECT... [3]
2022 INTER... [2]
IEEE TRANS... [2]
NATURE ELE... [2]
PHYSICAL R... [2]
PHYSICAL R... [2]
More...
Language
英语 [26]
中文 [2]
Funding Project
Major Proj... [3]
Shanghai P... [3]
National K... [2]
Shanghai S... [2]
Shanghaite... [2]
Engineerin... [1]
More...
Funding Organization
Indexed By
EI [18]
SCI [17]
SCIE [15]
SCOPUS [4]
其他 [3]
CPCI [1]
More...
×
Knowledge Map
KMS
>
信息科学与技术学院
>
PI研究组
>
杨雨梦组
Feedback
杨雨梦组
Help
All of repository
杨雨梦组
Browse Items
Browse/Search Results:
1-10 of 30
Help
Filters
Community:杨雨梦组
First author affiliation
The first author
Corresponding Author
Selected(
0
)
Clear
Items/Page:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Sort:
Select
WOS Cited Times Ascending
WOS Cited Times Descending
Journal Impact Factor Ascending
Journal Impact Factor Descending
Title Ascending
Title Descending
Submit date Ascending
Submit date Descending
Author Ascending
Author Descending
Issue Date Ascending
Issue Date Descending
基于方向与强度可调自旋流的磁性纳米器件
专利
申请号:CN202211340168.8,申请日期: 2023-02-03,类型:发明申请,状态:实质审查
Inventors:
付震霄
;
杨雨梦
Unknown(547Kb)
  |  
Favorite
  |  
View/Download:27/0
  |  
Submit date:2023/02/03
Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate
期刊论文
ELECTRONICS LETTERS, 2023, 卷号: 59, 期号: 4
Authors:
Mu, Zhiqiang
;
Zhou, Hongyang
;
Yang, Yumeng
;
Liu, Qiang
;
Wei, Xing
Favorite
  |  
View/Download:7/0
  |  
Submit date:2023/03/15
nanofabrication
semiconductor device manufacture
silicon-on-insulator
transistors
Comparative Study of Temperature Impact in Spin-Torque Switched Perpendicular and Easy-Cone MTJs
期刊论文
NANOMATERIALS, 2023, 卷号: 13, 期号: 2
Authors:
Long, Jingwei
;
Hu, Qi
;
Yuan, Zhengping
;
Zhang, Yunsen
;
Xin, Yue
View
  |  
Adobe PDF(2427Kb)
  |  
Favorite
  |  
View/Download:34/6
  |  
Submit date:2023/03/10
spin-transfer torque
easy-cone magnetization
precession switching
current overdrive
write error rate
Room-Temperature Gate-Tunable Nonreciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures
期刊论文
ADVANCED MATERIALS, 2022
Authors:
Li, Lun
;
Wu, Yuyang
;
Liu, Xiaoyang
;
Liu, Jiuming
;
Ruan, Hanzhi
View
  |  
Adobe PDF(1507Kb)
  |  
Favorite
  |  
View/Download:63/17
  |  
Submit date:2023/02/03
electric-field control
interfacial Rashba effect
narrow-bandgap semiconductor heterostructures
nonreciprocal transport
spin-orbit coupling
Tailoring the magnetic exchange interaction in MnBi2Te4 superlattices via the intercalation of ferromagnetic layers
期刊论文
NATURE ELECTRONICS, 2022
Authors:
Chen, Peng
;
Yao, Qi
;
Xu, Junqi
;
Sun, Qiang
;
Grutter, Alexander J.
View
  |  
Adobe PDF(1123Kb)
  |  
Favorite
  |  
View/Download:115/29
  |  
Submit date:2023/01/16
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022
Authors:
Qian, Yijun
;
Gao, Yuan
;
Shukla, Amit Kumar
;
Sun, Lu
;
Zou, Xinbo
Adobe PDF(3370Kb)
  |  
Favorite
  |  
View/Download:64/0
  |  
Submit date:2022/10/08
Stress
Logic gates
MOSFET
Electron traps
Degradation
Hot carriers
Market research
Gate-induced drain leakage (GIDL) current
hot carrier stress (HCS)
parasitic bipolar transistor (PBT)
Spatially nonuniform oscillations in ferrimagnets based on an atomistic model
期刊论文
PHYSICAL REVIEW B, 2022, 卷号: 106, 期号: 18
Authors:
Zhang, Xue
;
Cai, Baofang
;
Ren, Jie
;
Yuan, Zhengping
;
Xu, Zhengde
Adobe PDF(895Kb)
  |  
Favorite
  |  
View/Download:76/0
  |  
Submit date:2022/11/28
ferrimagnetic
Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2022, 卷号: 43, 期号: 11, 页码: 1-1
Authors:
Liu, Qiang
;
Zhou, Hongyang
;
Jia, Xin
;
Yang, Yumeng
;
Mu, Zhiqiang
Adobe PDF(2468Kb)
  |  
Favorite
  |  
View/Download:24/0
  |  
Submit date:2022/11/04
Hardening
Ionizing radiation
MOSFET devices
Radiation effects
Radiation hardening
Radiation shielding
Silicon on insulator technology
Threshold voltage
MOS-FET
MOSFETs
Radiation hardening (electronic)
Radiation hardening (electronics)
Radiation immunity
Silicon on insulator
Total Ionizing Dose
Total ionizing dose hardening
Void embedded silicon on insulator
垂直反铁磁体的无场自旋轨道力矩翻转
会议论文
中国物理学会2022秋季学术会议
Authors:
徐正德
;
任杰
;
袁正平
;
辛玥
;
张雪
Adobe PDF(626Kb)
  |  
Favorite
  |  
View/Download:86/0
  |  
Submit date:2022/11/10
垂直磁化
反铁磁
自旋轨道力矩
无场翻转
Controlled growth of ultrathin ferromagnetic beta-MnSe semiconductor
期刊论文
SMARTMAT, 2022, 卷号: 3, 期号: 3, 页码: 482-490
Authors:
Zou, Jingyun
;
Yang, Yumeng
;
Hu, Dianyi
;
Kang, Lixing
;
Zhu, Chao
Favorite
  |  
View/Download:17/0
  |  
Submit date:2022/11/08
2D ferromagnetism
controllable growth
manganese selenide
morphological engineering
nonlayered crystals